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2N4126 PDF预览

2N4126

更新时间: 2024-09-28 22:45:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器小信号双极晶体管
页数 文件大小 规格书
2页 97K
描述
PNP General Purpose Amplifier

2N4126 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.07Is Samacsys:N
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):60
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

2N4126 数据手册

 浏览型号2N4126的Datasheet PDF文件第2页 
Discrete POWER & Signal  
Technologies  
2N4126  
MMBT4126  
C
E
TO-92  
C
B
B
SOT-23  
Mark: ZF  
E
PNP General Purpose Amplifier  
This device is designed for general purpose amplifier and switching  
applications at collector currents to 10 µA as a switch and to 100  
mA as an amplifier. Sourced from Process 66. See 2N3906 for  
characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
25  
25  
V
V
4.0  
V
Collector Current - Continuous  
200  
mA  
°C  
Operating and Storage Junction Temperature Range  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA= 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N4126  
*MMBT4126  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
350  
2.8  
mW  
mW/°C  
°C/W  
Rθ  
JC  
Rθ  
Thermal Resistance, Junction to Ambient  
200  
357  
°C/W  
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1997 Fairchild Semiconductor Corporation  

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