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2N4126/E7 PDF预览

2N4126/E7

更新时间: 2024-09-28 23:19:47
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
4页 157K
描述
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 200MA I(C) | TO-226AA

2N4126/E7 数据手册

 浏览型号2N4126/E7的Datasheet PDF文件第2页浏览型号2N4126/E7的Datasheet PDF文件第3页浏览型号2N4126/E7的Datasheet PDF文件第4页 
2N4126  
Vishay Semiconductors  
formerly General Semiconductor  
Small Signal Transistor (PNP)  
TO-226AA (TO-92)  
0.142 (3.6)  
0.181 (4.6)  
Features  
• PNP Silicon Epitaxial Transistor for switching and  
amplifier applications.  
• Especially suitable for AF-driver and low-power  
output stages.  
• As complementary type, the NPN transistor  
2N4124 is recommended.  
Mechanical Data  
Case: TO-92 Plastic Package  
Weight: approx. 0.18g  
max.  
0.022 (0.55)  
Packaging Codes/Options:  
E6/Bulk 5K per container, 20K/box  
E7/4K per Ammo mag., 20K/box  
0.098 (2.5)  
Dimensions in inches  
and (millimeters)  
Bottom  
View  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Value  
Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
25  
V
25  
V
4
V
Collector Current  
200  
mA  
mA  
mA  
mW  
°C/W  
°C  
Peak Collector Current  
Base Current  
ICM  
IB  
800  
50  
Power Dissipation at Tamb = 25°C  
Thermal Resistance Junction to Ambient Air  
Junction Temperature  
Ptot  
625(1)  
200(1)  
150  
RΘJA  
Tj  
Storage Temperature Range  
TS  
65 to +150  
°C  
Note: (1) Valid provided that leads at a distance of 2 mm from case are kept at ambient temperature.  
Document Number 88116  
07-May-02  
www.vishay.com  
1

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