Datasheet > 2N4124

2N4124

更新时间： 2024-11-26 07:28:35

品牌	Logo	应用领域
SECOS		晶体晶体管开关
页数	文件大小	规格书
1页	79K
描述
NPN Plastic Encapsulated Transistor

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2N4124 数据手册

2N4124

0.2 A, 30 V

NPN Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

TO-92



High DC Current Gain

High Transition Frequency

 Emitter

 Base

 Collector

Collector

Millimeter

REF.

Min.

4.40

4.30

12.70

3.30

0.36

Max.

4.70

3.81

0.56

0.51





Base

1.27 TYP.

1.10

2.42

0.36



Emitter

2.66

0.76

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

V_CBO

V_CEO

V_EBO

I_C

Collector to Emitter Voltage

Emitter to Base Voltage

0.2

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance Junction to Ambient

Junction, Storage Temperature

P_C

350

°C / W

°C

R_θJA

T_J, T_STG

357

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Test Condition

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C= 0.01mA, I_E= 0A

I_C=1mA, I_B= 0A

I_E= 0.01mA, I_C= 0A

V_CB= 20V, I_E= 0 A

V_EB= 3V, I_C= 0 mA

V_CE= 1V, I_C= 2 mA

V_CE= 1V, I_C=50mA

360

Emitter Cut-Off Current

I_EBO

h_{FE (1)}

120

DC Current Gain

h_{FE (2)}

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

V_CE(sat)

V_BE(sat)

0.3

I_C=50mA, I_B=5mA

0.95

I_C=50mA, I_B=5mA

Collector output Capacitance

Transition Frequency

C_ob

f_T

V_CB= 5V, I_E= 0A, f=1MHz

300

MHz V_CE= 20V, I_C= 10mA, f=100MHz

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

29-Dec-2010 Rev. A

Page 1 of 1

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