Datasheet > 2N4124/E7

2N4124/E7

更新时间： 2024-01-24 19:27:21

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	187K
描述
TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 200MA I(C) \| TO-226AA

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技术参数
数据手册

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2N4124/E7 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.82	最大集电极电流 (IC)：	0.2 A
配置：	Single	最小直流电流增益 (hFE)：	120
元件数量：	1	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.625 W
子类别：	Other Transistors	表面贴装：	NO

2N4124/E7 数据手册

2N4124

Vishay Semiconductors

formerly General Semiconductor

Small Signal Transistor (NPN)

TO-226AA (TO-92)

0.142 (3.6)

0.181 (4.6)

Features

• NPN Silicon Epitaxial Transistor for switching and

amplifier applications.

• Especially suitable for AF-driver and low-power

output stages.

• As complementary type, the PNP transistor

2N4126 is recommended.

Mechanical Data

Case: TO-92 Plastic Package

Weight: approx. 0.18g

max.

0.022 (0.55)

Packaging Codes/Options:

E6/Bulk – 5K per container, 20K/box

E7/4K per Ammo mag., 20K/box

0.098 (2.5)

Dimensions in inches

and (millimeters)

Bottom

View

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

V_CEO

V_CBO

V_EBO

I_C

Value

Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

200

°C/W

°C

Peak Collector Current

Base Current

I_CM

800

I_B

Power Dissipation at T_amb= 25°C

Thermal Resistance Junction to Ambient Air

Junction Temperature

P_tot

625⁽¹⁾

200⁽¹⁾

150

R_ΘJA

T_j

Storage Temperature Range

T_S

–65 to +150

°C

Note: (1) Valid provided that leads at a distance of 2mm from case are kept at ambient temperature.

Document Number 88115

07-May-02

www.vishay.com

12 3 4

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