2N4123/D

更新时间： 2024-01-28 02:35:57

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	165K
描述
General Purpose Transistor - NPN

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技术参数
数据手册

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2N4123/D 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	Reach Compliance Code：	not_compliant
风险等级：	5.7	基于收集器的最大容量：	4 pF
集电极-发射极最大电压：	30 V	配置：	SINGLE
最小直流电流增益 (hFE)：	50	JEDEC-95代码：	TO-92
JESD-30 代码：	O-PBCY-T3	JESD-609代码：	e0
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	CYLINDRICAL	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	NO	端子面层：	TIN LEAD
端子形式：	THROUGH-HOLE	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	250 MHz
VCEsat-Max：	0.3 V	Base Number Matches：	1

2N4123/D 数据手册

Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in

systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of

the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such

unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

Motorola and

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

USA/EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447

6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609

INTERNET: http://Design–NET.com

HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N4123/D

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与2N4123/D相关器件

型号	品牌	描述	获取价格	数据表
2N4123/D10Z	TI	200mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	获取价格
2N4123/D11Z	TI	200mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	获取价格
2N4123/D27Z	TI	200mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	获取价格
2N4123/D28Z	TI	200mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	获取价格
2N4123/D74Z	TI	200mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	获取价格
2N4123/D81Z	TI	200mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	获取价格

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