2N4123-AP

更新时间： 2024-01-27 11:51:02

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
5页	745K
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数据手册

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2N4123-AP 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

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2N4123

2N4124

Features

l Through Hole TO-92 Package

NPN Silicon General

Purpose Transistor

625mW

l Capable of 625mWatts of Power Dissipatio

Pin Configuration

Bottom View

TO-92

Mechanical Data

l Case: TO-92, Molded Plastic

l Marking:

2N4123 --------- 2N4123

2N4124 --------- 2N4124

Maximum Ratings @ 25^oC Unless Otherwise Specified

Charateristic

Symbol Value Unit

Collector-Emitter Voltage 2N4123

2N4124

Collector-Base Voltage 2N4123

V_CEO

V_CBO

2N4124

Emitter-Base Voltage

Collector Current(DC)

2N4123

2N4124

V_EBO

I_C

200

625

5.0

1.5

mW/^oC

Power Dissipation@T_A=25^oC

Power Dissipation@T_C=25^oC

P_d

Thermal Resistance, Junction to

Ambient Air

DIMENSIONS

^oC/W

ꢀ_ꢀꢁꢂꢃ

200

INCHES

MIN

.175

.500

.016

.135

.095

MIN

DIM

MAX

4.70

---

0.63

3.68

2.67

NOTE

.185

---

.020

.145

.105

4.45

4.46

12.7

0.41

3.43

2.42

Thermal Resistance, Junction to

Case

Operating & Storage Temperature T, T_STG-55~150 ^oC

^oC/W

ꢀ_ꢀꢁꢂꢃ

83.3

www.mccsemi.com

12 3 4 5

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