Datasheet > 2N3906_02

2N3906_02

更新时间： 2024-11-29 07:28:35

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
4页	54K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

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中文翻译

获取价格

数据手册

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2N3906_02 数据手册

SEMICONDUCTOR

2N3906

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURES

Low Leakage Current

DIM MILLIMETERS

: I_CEX=-50nA(Max.), I_BL=-50nA(Max.)

@V_CE=-30V, V_EB=-3V.

4.70 MAX

4.80 MAX

3.70 MAX

0.45

Excellent DC Current Gain Linearity.

Low Saturation Voltage

1.00

1.27

0.85

: V_CE(sat)=-0.4V(Max.) @I_C=-50mA, I_B=-5mA.

Low Collector Output Capacitance

: C_ob=4.5pF(Max.) @V_CB=5V.

Complementary to 2N3904.

0.45

14.00 +0.50

0.55 MAX

2.30

0.45 MAX

1.00

1. EMITTER

2. BASE

3. COLLECTOR

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

-40

UNIT

TO-92

-40

-5

-200

-50

I_B

Base Current

625

Ta=25

Tc=25

Collector Power

Dissipation

P_C

1.5

T_j

Junction Temperature

150

T_stg

Storage Temperature Range

-55 150

2002. 9. 12

Revision No : 2

1/4

12 3 4

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