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2N3904O-G PDF预览

2N3904O-G

更新时间: 2024-11-24 13:04:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
4页 211K
描述
Transistor

2N3904O-G 数据手册

 浏览型号2N3904O-G的Datasheet PDF文件第2页浏览型号2N3904O-G的Datasheet PDF文件第3页浏览型号2N3904O-G的Datasheet PDF文件第4页 
2N3904  
NPN GENERAL PURPOSE SWITCHING TRANSISTOR  
40 Volts  
625 mWatts  
VOLTAGE  
POWER  
FEATURES  
• NPN epitaxial silicon, planar design  
• Collector-emitter voltage VCE = 40V  
• Collector current IC = 200mA  
• Complimentary (PNP) device:2N3906  
• Pb free product are available :99% Sn above can meet RoHS  
environment substance directive request  
MECHANICAL DATA  
Case: TO-92  
Terminals: Solderable per MIL-STD-202, Method 208  
Approx Weight : 0.02grams  
Marking : 3904  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
Symbol  
VC E O  
Value  
40  
Units  
V
Collector - Emitter Voltage  
Collector - Base Voltage  
Emitter - Base Voltage  
VC B O  
VE B O  
I C  
60  
6.0  
200  
V
V
Collector Current - Continuous  
mA  
THERMALCHARACTERISTICS  
PARAMETER  
Symbol  
PTOT  
Value  
625  
Units  
mW  
Max Power Dissipation  
Storage Temperature  
TSTG  
-55 to 150  
-55 to 150  
200  
OC  
OC  
Junction Temperature  
TJ  
Thermal Resistance, Junction to Ambient  
RθJA  
OC/W  
STAD-SEP.13.2005  
PAGE . 1  

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