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2N3904SC PDF预览

2N3904SC

更新时间: 2024-11-25 17:15:31
品牌 Logo 应用领域
KEC /
页数 文件大小 规格书
3页 700K
描述
SOT-23(1)

2N3904SC 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknown风险等级:5.57
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):150
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
最大关闭时间(toff):250 ns最大开启时间(吨):70 ns
Base Number Matches:1

2N3904SC 数据手册

 浏览型号2N3904SC的Datasheet PDF文件第2页浏览型号2N3904SC的Datasheet PDF文件第3页 
SEMICONDUCTOR  
2N3904SC  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
GENERAL PURPOSE APPLICATION.  
SWITCHING APPLICATION.  
FEATURES  
· Low Leakage Current  
: ICEX=50nA(Max.), IBL=50nA(Max.)  
@VCE=30V, VEB=3V.  
· Excellent DC Current Gain Linearity.  
· Low Saturation Voltage  
: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.  
· Complementary to 2N3906SC.  
MAXIMUM RATING (Ta=25)  
CHARACTERISTIC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
SYMBOL  
RATING  
UNIT  
V
VCBO  
VCEO  
VEBO  
IC  
60  
40  
V
6
V
200  
mA  
mA  
mW  
IB  
Base Current  
50  
PC *  
Tj  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature Range  
350  
150  
Tstg  
-55150  
* PC : Package Mounted On 99.5% Alumina 10×8×0.6)  
2015. 5. 12  
Revision No : 0  
1/3  

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