2N3904RLRP

更新时间： 2024-01-28 02:02:31

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
8页	102K
描述
General Purpose Transistors(NPN Silicon)

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技术参数
数据手册

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2N3904RLRP 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2N3904RLRP 数据手册

2N3903, 2N3904

2N3903 is a Preferred Device

General Purpose

Transistors

NPN Silicon

http://onsemi.com

COLLECTOR

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

BASE

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CBO

EBO

Vdc

6.0

Vdc

EMITTER

Collector Current – Continuous

200

mAdc

STYLE 1

Total Device Dissipation

@ T = 25°C

625

5.0

mW/°C

Derate above 25°C

TO–92

Total Device Dissipation

CASE 29

STYLE 1

@ T = 25°C

1.5

Watts

mW/°C

Derate above 25°C

Operating and Storage Junction

Temperature Range

T , T

stg

–55 to

+150

°C

MARKING DIAGRAMS

THERMAL CHARACTERISTICS (Note 1.)

Characteristic Symbol

Thermal Resistance,

3903

YWW

3904

YWW

Max

Unit

200

°C/W

θJA

Junction to Ambient

Thermal Resistance,

Junction to Case

83.3

°C/W

θJC

= Year

= Work Week

1. Indicates Data in addition to JEDEC Requirements.

ORDERING INFORMATION

Device

2N3903

Package

TO–92

Shipping

5000 Units/Box

2N3903RLRM

2N3904

2000/Ammo Pack

5000 Units/Box

2N3904RLRA

2N3904RLRE

2N3904RLRM

2N3904RLRP

2N3904RL1

2N3904ZL1

2000/Tape & Reel

2000/Ammo Pack

2000/Tape & Reel

2000/Ammo Pack

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

November, 2000 – Rev. 3

2N3903/D

12 3 4 5 6 7 8

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