是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | Reach Compliance Code: | not_compliant |
风险等级: | 5.74 | 其他特性: | LOW NOISE |
集电极-发射极最大电压: | 30 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 180 | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
VCEsat-Max: | 1 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N3711TRH | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, |
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2N3712 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 200MA I(C) | TO-5 |
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2N3713 | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed TO3 |
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2N3713 | COMSET |
获取价格 |
EPITAXIAL-BASE NPN - PNP |
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2N3713 | NJSEMI |
获取价格 |
NPN SILICON POWER TRANSISTORS |
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2N3713 | ASI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 P |
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2N3713 | MOSPEC |
获取价格 |
POWER TRANSISTORS(10A,150W) |
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2N3713 | BOCA |
获取价格 |
SILICON NPN POWER TRANSISTORS |
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2N3713 | CENTRAL |
获取价格 |
60V,10A,150W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Swi |
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2N3713_12 | COMSET |
获取价格 |
EPITAXIAL-BASE TRANSISTORS |
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