生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.30.00.80 | 风险等级: | 5.69 |
Is Samacsys: | N | 配置: | SINGLE |
最大直流栅极触发电流: | 0.02 mA | 最大直流栅极触发电压: | 0.7 V |
JEDEC-95代码: | TO-18 | JESD-30 代码: | O-MBCY-W3 |
最大漏电流: | 0.1 mA | 通态非重复峰值电流: | 6 A |
元件数量: | 1 | 端子数量: | 3 |
最大通态电流: | 250 A | 最高工作温度: | 155 °C |
最低工作温度: | -60 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
最大均方根通态电流: | 0.35 A | 断态重复峰值电压: | 100 V |
重复峰值反向电压: | 100 V | 子类别: | Silicon Controlled Rectifiers |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 触发设备类型: | SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N3003LEADFREE | CENTRAL |
获取价格 |
Silicon Controlled Rectifier, 0.8A I(T)RMS, 100V V(RRM), 1 Element, TO-18, | |
2N3004 | BOCA |
获取价格 |
SCRs (Silicon Controlled Rectifiers) | |
2N3004 | CENTRAL |
获取价格 |
0.8 to 110 Amperes RMS 15 to 1200 Volts | |
2N3004 | NJSEMI |
获取价格 |
P-N-P-N PLANAR SILICON REVERSE-BLOCKING TRIODE THYRISTOR | |
2N3004 | SSDI |
获取价格 |
Silicon Controlled Rectifier, 0.35A I(T)RMS, 250mA I(T), 200V V(DRM), 200V V(RRM), 1 Eleme | |
2N3004LEADFREE | CENTRAL |
获取价格 |
Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(RRM), 1 Element, TO-18 | |
2N3005 | NJSEMI |
获取价格 |
SCR, V(DRM) < 50 V | |
2N3005 | BOCA |
获取价格 |
SCRs (Silicon Controlled Rectifiers) | |
2N3005 | CENTRAL |
获取价格 |
0.8 to 110 Amperes RMS 15 to 1200 Volts | |
2N3005 | SSDI |
获取价格 |
Silicon Controlled Rectifier, 0.35A I(T)RMS, 250mA I(T), 30V V(DRM), 30V V(RRM), 1 Element |