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2N2919 PDF预览

2N2919

更新时间: 2024-11-30 07:20:23
品牌 Logo 应用领域
NJSEMI 晶体放大器晶体管
页数 文件大小 规格书
1页 133K
描述
DIFFERENTIAL AMPLIFIER AND DUAL NPN SILICON TRANSISTOR

2N2919 技术参数

生命周期:Active包装说明:CYLINDRICAL, O-MBCY-W3
Reach Compliance Code:unknown风险等级:5.67
最大集电极电流 (IC):0.03 A集电极-发射极最大电压:60 V
JESD-30 代码:O-MBCY-W3元件数量:2
端子数量:3封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN端子形式:WIRE
端子位置:BOTTOM晶体管元件材料:SILICON
Base Number Matches:1

2N2919 数据手册

  

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