Datasheet > 2N1613_12

2N1613_12

更新时间： 2024-11-12 12:30:51

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描述
SILICON PLANAR EPITAXIAL TRANSISTORS

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2N1613_12 数据手册

NPN 2N1613 – 2N1711

SILICON PLANAR EPITAXIAL TRANSISTORS

The 2N1613 and 2N1711 are NPN transistors mounted in TO-39 metal package with the collector

connected to the case .

They are designed for use in high-performance amplifier, oscillator and switching circuits.

The 2N1711 is also used to advantage in amplifiers where low noise is an important factor.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

V_CBO

V_CER

V_EBO

I_C

I_CM

I_BM

Collector-Base Voltage

Collector-Emitter Voltage (R_BE= 10Ω)

Emitter-Base Voltage

Collector Current

Peak Collector Current

Peak Base Current

200

1.7

0.8

200

°C

@ T_case= 25°

@ T_case= 100°

@ T_amb= 25°

P_D

Total Power Dissipation

T_J

Junction Temperature

T_Stg

Storage Temperature range

-65 to +150

°C

THERMAL CHARACTERISTICS

Symbol Ratings

Value

Unit

R_thJ-c

R_thJ-amb

Thermal Resistance, Junction-case

Thermal Resistance, Junction-ambient

219

°C/ W

COMSET SEMICONDUCTORS

1/3

12 3

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与2N1613_12相关器件

型号	品牌	获取价格	描述	数据表
2N1613A	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 70V V(BR)CEO, NPN, Silicon, TO-5, TO-5, 3 PIN
2N1613A	ONSEMI	获取价格	TRANSISTOR TRANSISTOR,BJT,NPN,7V V(BR)CEO,TO-5, BIP General Purpose Small Signal
2N1613B	CENTRAL	获取价格	Small Signal Bipolar Transistor, 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PI
2N1613D	ZETEX	获取价格	Transistor
2N1613L	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO5
2N1613L	MICROSEMI	获取价格	NPN LOW POWER SILICON TRANSISTOR
2N1613LE3	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, T
2N1614	ETC	获取价格	alloy-junction germanium transistors
2N1615	ETC	获取价格	Small Signal Transistors
2N1616	SEME-LAB	获取价格	NPN SILICON TRANSISTOR