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2MBI800VG-170E PDF预览

2MBI800VG-170E

更新时间： 2024-11-18 19:50:31
品牌 Logo 应用领域
富士通 - FUJITSU 栅
页数 文件大小 规格书
6页 431K
描述
Insulated Gate Bipolar Transistor,

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中文翻译

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2MBI800VG-170E 技术参数

生命周期：Active包装说明：,
Reach Compliance Code：compliant风险等级：5.72
Base Number Matches：1

2MBI800VG-170E 数据手册

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http://www.fujielectric.com/products/semiconductor/  
IGBT Modules  
2MBI800VG-170E  
IGBT MODULE (V series)  
1700V / 800A / 2 in one package  
Features  
High speed switching  
Voltage drive  
Low Inductance module structure  
Applications  
Inverter for Motor Drive  
AC and DC Servo Drive Amplifier  
Uninterruptible Power Supply  
Industrial machines, such as Welding machines  
Maximum Ratings and Characteristics  
Absolute Maximum Ratings (at T =25°C unless otherwise specified)  
C
Items  
Symbols  
Conditions  
Maximum ratings  
Units  
Collector-Emitter voltage  
Gate-Emitter voltage  
V
CES  
1700  
±20  
V
V
VGES  
T
T
C
C
=25°C  
=100°C  
1200  
800  
1600  
800  
I
C
Continuous  
1ms  
Collector current  
I
-I  
C pulse  
A
C
-IC pulse  
1ms  
1 device  
1600  
5760  
175  
Collector power dissipation  
Junction temperature  
Operating junction temperature (under switching conditions)  
Storage temperature  
P
C
W
°C  
T
T
T
j
jop  
stg  
150  
-40 ~ +150  
4000  
5.75  
Isolation voltage between terminal and copper base (*1)  
V
iso  
AC : 1min.  
M6  
VAC  
N m  
Mounting  
Screw torque (*2)  
Main Terminals  
Sense Terminals  
M8  
M4  
10  
2.5  
Note *1:All terminals should be connected together when isolation test will be done.  
Note *2: Recommendable Value :  
Mounting 4.25~5.75 Nm (M6) , Main Terminals 8~10 Nm (M8) , Sense Terminals 1.7~2.5 Nm (M4)  
Electrical characteristics (at T= 25°C unless otherwise specified)  
j
Characteristics  
Items  
Symbols  
Conditions  
Units  
min.  
typ.  
-
max.  
Zero gate voltage collector current  
Gate-Emitter leakage current  
Gate-Emitter threshold voltage  
I
I
CES  
GES  
V
V
V
GE = 0V, VCE = 1700V  
CE = 0V, VGE = ±20V  
-
-
1.0  
mA  
nA  
V
-
1600  
V
GE (th)  
CE = 20V, I  
C
= 800mA  
6.0  
-
-
-
-
-
-
-
-
6.5  
7.0  
VCE (sat)  
Tj  
Tj  
Tj  
Tj  
Tj  
Tj  
=25°C  
2.21  
2.61  
2.66  
2.00  
2.40  
2.45  
2.19  
79  
2.49  
(main  
terminal)  
=125°C  
=150°C  
=25°C  
=125°C  
=150°C  
-
-
VGE = 15V  
Collector-Emitter saturation voltage  
V
I
C
= 800A  
2.25  
VCE (sat)  
-
-
-
-
(chip)  
Internal gate resistance  
Input capacitance  
Int  
RG  
Ω
nF  
Cies  
VCE = 10V, VGE = 0V, f = 1MHz  
t
t
t
t
on  
V
CC = 900V  
= 800A  
= 75nH  
T
R
R
j
= 125°C  
-
-
-
-
-
-
-
-
-
-
-
-
2.41  
0.89  
2.13  
0.55  
2.02  
2.22  
2.19  
1.80  
2.00  
1.98  
0.36  
0.268  
-
-
-
-
Turn-on  
Turn-off  
r
IC  
Gon = 2.4Ω  
Goff = 0.82Ω  
µs  
V
off  
f
L
m
V
GE = ±15V  
V
(main  
terminal)  
F
Tj  
Tj  
Tj  
Tj  
Tj  
Tj  
=25°C  
2.40  
-
-
=125°C  
=150°C  
=25°C  
=125°C  
=150°C  
VGE = 0V  
Forward on voltage  
I
F
= 800A  
2.15  
V
(chip)  
F
-
-
-
-
Reverse recovery  
Lead resistance, terminal-chip  
trr  
I
F
= 800A, T  
j
= 125°C  
µs  
mΩ  
R
lead  
Thermal resistance characteristics  
Items  
Characteristics  
Symbols  
Conditions  
Units  
min.  
typ.  
max.  
IGBT  
FWD  
-
-
-
-
-
0.026  
0.045  
-
Thermal resistance (1device)  
R
th(j-c)  
th(c-f)  
°C/W  
Contact thermal resistance (1device)  
R
with Thermal Compound (*3)  
0.006  
Note *3: This is the value which is defined mounting on the additional cooling fin with thermal compound.  
1
123456

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