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2MBI800VT-170E PDF预览

2MBI800VT-170E

更新时间： 2024-11-18 21:07:23
品牌 Logo 应用领域
富士电机 - FUJI 栅
页数 文件大小 规格书
7页 628K
描述
Insulated Gate Bipolar Transistor

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中文翻译

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2MBI800VT-170E 技术参数

生命周期：Active包装说明：,
Reach Compliance Code：unknown风险等级：5.64
Base Number Matches：1

2MBI800VT-170E 数据手册

 浏览型号2MBI800VT-170E的Datasheet PDF文件第2页浏览型号2MBI800VT-170E的Datasheet PDF文件第3页浏览型号2MBI800VT-170E的Datasheet PDF文件第4页浏览型号2MBI800VT-170E的Datasheet PDF文件第5页浏览型号2MBI800VT-170E的Datasheet PDF文件第6页浏览型号2MBI800VT-170E的Datasheet PDF文件第7页 
http://www.fujielectric.com/products/semiconductor/  
IGBT Modules  
2MBI800VT-170E  
IGBT MODULE (V series)  
1700V / 800A / 2 in one package  
Features  
High speed switching  
Voltage drive  
Low Inductance module structure  
Applications  
Inverter for Motor Drive  
AC and DC Servo Drive Amplifier  
Uninterruptible Power Supply  
Industrial machines, such as Welding machines  
Maximum Ratings and Characteristics  
Absolute Maximum Ratings (at T =25°C unless otherwise specified)  
C
Items  
Symbols  
Conditions  
Maximum ratings  
Units  
Collector-Emitter voltage  
Gate-Emitter voltage  
V
CES  
1700  
±20  
V
V
V
GES  
T
T
C
C
=25°C  
=100°C  
1200  
800  
1600  
800  
I
I
C
Continuous  
1ms  
Collector current  
CP  
A
-I  
C
-IC pulse  
1ms  
1 device  
1600  
5370  
175  
Collector power dissipation  
Junction temperature  
Operating junction temperature (under switching conditions)  
Storage temperature  
PC  
W
°C  
T
T
T
j
jop  
stg  
150  
-40 ~ +125  
4000  
5.75  
Isolation voltage between terminal and copper base (*1)  
Mounting  
Screw torque (*2) Main Terminals  
Sense Terminals  
Viso  
AC : 1min.  
M6  
VAC  
N m  
-
-
-
M8  
M4  
10  
2.5  
Note *1:All terminals should be connected together when isolation test will be done.  
Note *2: Recommendable Value :  
Mounting 4.25~5.75 Nm (M6) , Main Terminals 8~10 Nm (M8) , Sense Terminals 1.7~2.5 Nm (M4)  
Electrical characteristics (at T= 25°C unless otherwise specified)  
j
Characteristics  
Items  
Symbols  
Conditions  
Units  
min.  
typ.  
max.  
Zero gate voltage collector current  
Gate-Emitter leakage current  
Gate-Emitter threshold voltage  
I
I
V
CES  
GES  
V
V
V
GE = 0V, VCE = 1700V  
CE = 0V, VGE = ±20V  
-
-
-
-
1.0  
1600  
7.0  
2.49  
-
-
2.25  
-
-
-
mA  
nA  
V
GE (th)  
CE = 20V, I  
C
= 800mA  
6.0  
-
-
-
-
-
-
-
-
6.5  
Tj  
Tj  
Tj  
Tj  
Tj  
Tj  
=25°C  
2.21  
2.61  
2.66  
2.00  
2.40  
2.45  
2.19  
79  
V
CE (sat)  
=125°C  
=150°C  
=25°C  
=125°C  
=150°C  
(main terminal)  
VGE = 15V  
Collector-Emitter saturation voltage  
V
I
C
= 800A  
V
(chip)  
CE (sat)  
Internal gate resistance  
Input capacitance  
I
C
nt  
R
G
Ω
nF  
ies  
VCE = 10V, VGE = 0V, f = 1MHz  
-
t
t
t
t
on  
V
CC = 900V  
= 800A  
=75nH  
R
gon = 1.5Ω  
-
-
-
-
-
-
-
-
-
-
-
-
2.0  
-
-
-
-
Turn-on  
Turn-off  
r
IC  
R
goff = 0.82Ω  
0.67  
2.13  
0.55  
1.87  
2.03  
2.00  
1.66  
1.82  
1.79  
0.35  
0.268  
µs  
V
off  
f
Lm  
V
GE = ±15V, T=125°C  
j
Tj  
Tj  
Tj  
Tj  
Tj  
Tj  
=25°C  
2.22  
-
-
V
F
=125°C  
=150°C  
=25°C  
=125°C  
=150°C  
(main terminal)  
VGE = 0V  
Forward on voltage  
I
F
= 800A  
1.98  
V
(chip)  
F
-
-
-
-
Reverse recovery  
Lead resistance, terminal-chip  
trr  
I
F
= 800A, T  
j
= 125°C  
µs  
mΩ  
R lead  
Thermal resistance characteristics  
Items  
Characteristics  
Symbols  
Conditions  
Units  
min.  
typ.  
max.  
IGBT  
FWD  
-
-
-
-
-
0.0279  
0.0375  
-
Thermal resistance(1device)  
R
th(j-c)  
th(c-f)  
°C/W  
Contact thermal resistance (1module) (*3)  
R
with Thermal Compound  
0.0077  
Note *3: This is the value which is defined mounting on the additional cooling fin with thermal compound.  
8048  
FEBRUARY 2013  
1
1234567

中文翻译

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