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2MBI900VXA-120E-50

更新时间： 2024-11-21 15:19:39
品牌 Logo 应用领域
富士电机 - FUJI /
页数 文件大小 规格书
8页 615K
描述
2-Pack(2 in 1) M271

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2MBI900VXA-120E-50 数据手册

 浏览型号2MBI900VXA-120E-50的Datasheet PDF文件第2页浏览型号2MBI900VXA-120E-50的Datasheet PDF文件第3页浏览型号2MBI900VXA-120E-50的Datasheet PDF文件第4页浏览型号2MBI900VXA-120E-50的Datasheet PDF文件第5页浏览型号2MBI900VXA-120E-50的Datasheet PDF文件第6页浏览型号2MBI900VXA-120E-50的Datasheet PDF文件第7页 
http://www.fujielectric.com/products/semiconductor/  
2MBI900VXA-120E-50  
IGBT MODULE (V series)  
IGBT Modules  
1200V / 900A / 2 in one package  
Features  
High speed switching  
Voltage drive  
Low Inductance module structure  
Applications  
Inverter for Motor Drive  
AC and DC Servo Drive Amplifier  
Uninterruptible Power Supply  
Industrial machines, such as Welding machines  
Maximum Ratings and Characteristics  
Absolute Maximum Ratings (at T =25°C unless otherwise specified)  
C
Items  
Symbols  
Conditions  
Maximum ratings  
Units  
Collector-Emitter voltage  
Gate-Emitter voltage  
V
CES  
1200  
±20  
V
V
V
GES  
T
T
C
C
=25°C  
=100°C  
1200  
900  
1800  
900  
I
C
Continuous  
1ms  
Collector current  
I
-I  
C pulse  
A
C
-IC pulse  
1ms  
1 device  
1800  
5100  
175  
150  
150  
Collector power dissipation  
Junction temperature  
P
C
W
T
T
T
T
j
Operating junction temperature (under switching conditions)  
Case temperature  
jop  
C
°C  
Storage temperature  
stg  
-40 ~ +150  
between terminal and copper base (*1)  
between thermistor and others (*2)  
Mounting  
Screw torque (*3) Main Terminals  
Sense Terminals  
Isolation voltage  
V
iso  
AC : 1min.  
4000  
VAC  
N m  
-
-
-
M5  
M8  
M4  
6.0  
10.0  
2.1  
Note *1: All terminals should be connected together during the test.  
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.  
Note *3: Recommendable Value : Mounting  
Recommendable Value : Main Terminals  
Recommendable Value : Sense Terminals  
3.0 ~ 6.0 Nm (M5)  
8.0 ~ 10.0 Nm (M8)  
1.8 ~ 2.1 Nm (M4)  
Electrical characteristics (at T= 25°C unless otherwise specified)  
j
Characteristics  
Items  
Symbols  
Conditions  
Units  
min.  
typ.  
-
max.  
Zero gate voltage collector current  
Gate-Emitter leakage current  
Gate-Emitter threshold voltage  
I
I
CES  
GES  
V
V
V
GE = 0V, VCE = 1200V  
CE = 0V, VGE = ±20V  
-
-
8.0  
mA  
nA  
V
-
1600  
V
GE (th)  
CE = 20V, I  
C
= 900mA  
6.0  
6.5  
7.0  
V
CE (sat)  
T
T
T
T
T
T
j
j
j
j
j
j
=25°C  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.85  
2.15  
2.20  
1.75  
2.05  
2.10  
1.19  
83  
1000  
400  
150  
1200  
150  
1.90  
2.05  
2.00  
1.80  
1.95  
1.90  
200  
5000  
495  
3375  
2.30  
-
-
2.20  
-
-
-
-
-
-
-
-
-
2.35  
-
-
2.25  
-
-
-
-
(terminal)  
(*4)  
=125°C  
=150°C  
=25°C  
=125°C  
=150°C  
V
GE = 15V  
= 900A  
Collector-Emitter saturation voltage  
V
I
C
VCE (sat)  
(chip)  
Internal gate resistance  
Input capacitance  
R
C
G (int)  
ies  
-
V
V
Ω
nF  
CE = 10V, VGE = 0V, f = 1MHz  
CC = 600V  
t
t
t
t
t
on  
Turn-on time  
Turn-off time  
r
I
C
= 900A  
r (i)  
off  
f
VGE = ±15V  
nsec  
R
G
= 1.6Ω  
= 70nH  
LS  
VF  
Tj  
Tj  
Tj  
Tj  
Tj  
Tj  
=25°C  
(terminal)  
(*4)  
=125°C  
=150°C  
=25°C  
=125°C  
=150°C  
VGE = 0V  
Forward on voltage  
V
I
F
= 900A  
-
-
-
-
-
VF  
(chip)  
Reverse recovery time  
Resistance  
trr  
I
F
= 900A  
nsec  
Ω
T = 25°C  
T = 100°C  
T = 25/50°C  
R
B
465  
3305  
520  
3450  
B value  
K
Note *4: Fuji defined VCE value of terminal by using Sense C1 and Sense C2E1 for Upper arm and Sense C2E1 and Sense E2 for Lower arm.  
7731c  
APRIL 2014  
1
12345678

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