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2DC4617Q_2

更新时间： 2024-11-21 07:27:59
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
3页 104K
描述
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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2DC4617Q_2 数据手册

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2DC4617Q/R/S  
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Features  
•
•
•
•
Ultra Miniature Surface Mount Package  
SOT-523  
Complementary PNP Type Available (2DA1774Q,R,S)  
Lead Free/RoHS Compliant (Note 3)  
"Green" Device (Note 4 and 5)  
Dim Min Max Typ  
A
A
B
C
D
G
H
J
0.15 0.30 0.22  
0.75 0.85 0.80  
1.45 1.75 1.60  
C
Mechanical Data  
C
B
0.50  
•
•
Case: SOT-523  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See diagram  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin annealed over Alloy 42  
leadframe).  
Marking Information: (See Page 3): 2DC4617Q: 8D  
2DC4617R: 8E  
⎯
⎯
E
B
0.90 1.10 1.00  
1.50 1.70 1.60  
0.00 0.10 0.05  
0.60 0.80 0.75  
0.10 0.30 0.22  
0.10 0.20 0.12  
0.45 0.65 0.50  
G
H
•
•
•
•
K
J
N
K
L
M
M
N
α
L
D
•
2DC4617S: 8F  
0°  
8°  
⎯
•
•
Ordering Information: See Page 3  
Weight: 0.002 grams (approximate)  
All Dimensions in mm  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
V
60  
50  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
7.0  
150  
V
Collector Current - Continuous  
(Note 1)  
mA  
Thermal Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
Value  
150  
Unit  
mW  
Power Dissipation  
(Note 1)  
(Note 1)  
Pd  
Thermal Resistance, Junction to Ambient  
833  
°C/W  
Rθ  
JA  
Operating and Storage Temperature Range  
-55 to +150  
Tj, TSTG  
°C  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 2)  
Symbol  
Min  
Typ Max Unit  
Test Condition  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
60  
50  
7.0  
⎯
V
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
IC = 50μA, IE = 0  
IC = 1.0mA, IB = 0  
IE = 50μA, IC = 0  
VCB = 60V  
100 nA  
100 nA  
Emitter Cutoff Current  
IEBO  
⎯
VEB = 7.0V  
ON CHARACTERISTICS (Note 2)  
DC Current Gain  
⎯
⎯
⎯
⎯
2DC4617Q  
2DC4617R  
2DC4617S  
120  
180  
270  
270  
390  
560  
hFE  
⎯
VCE = 6.0V, IC = 1.0mA  
IC = 50mA, IB = 5.0mA  
Collector-Emitter Saturation Voltage  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
Current Gain-Bandwidth Product  
Current Gain-Bandwidth Product  
0.4  
V
VCE(SAT)  
⎯
2.0 3.5 pF  
180  
Cobo  
fT  
fT  
⎯
⎯
180 Typ.  
VCB = 12V, f = 1.0MHz, IE = 0  
VCE = 12V, IE = -2mA, f = 1MHz  
VCE = 12V, IE = 0A, f = 1MHz  
MHz  
MHz  
⎯
⎯
VCE = 12V, IC = -2.0mA,  
f = 100MHz  
Current Gain-Bandwidth Product  
180 Typ.  
MHz  
fT  
⎯
Notes:  
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration pulse test used to minimize self-heating effect.  
3. No purposefully added lead.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
2DC4617Q/R/S  
© Diodes Incorporated  
DS30252 Rev. 9 - 2  
1 of 3  
www.diodes.com  
123

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