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2DC4672

更新时间： 2024-09-27 07:27:59
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
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4页 104K
描述
NPN SURFACE MOUNT TRANSISTOR

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2DC4672 数据手册

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2DC4672  
NPN SURFACE MOUNT TRANSISTOR  
Features  
Mechanical Data  
•
•
•
•
•
•
Epitaxial Planar Die Construction  
•
•
Case: SOT89-3L  
Case Material: Molded Plastic, "Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish — Matte Tin annealed over Copper leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.055 grams (approximate)  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Complementary PNP Type Available (2DA1797)  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
•
•
•
•
•
COLLECTOR  
2,4  
3 E  
2 C  
1 B  
C 4  
1
BASE  
3
EMITTER  
Top View  
Pin Out Configuration  
Top View  
Device Schematic  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
ICM  
Value  
Unit  
V
60  
50  
6
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Peak Pulse Current  
6
A
Continuous Collector Current  
3
A
IC  
Thermal Characteristics  
Characteristic  
Symbol  
Value  
0.9  
Unit  
W
Power Dissipation (Note 3) @ TA = 25°C  
PD  
139  
°C/W  
W
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C  
Power Dissipation (Note 4) @ TA = 25°C  
Rθ  
JA  
2
PD  
62.5  
°C/W  
°C  
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C  
Operating and Storage Temperature Range  
Rθ  
JA  
-55 to +150  
TJ, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Typ  
Max  
Unit  
Conditions  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage (Note 5)  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
60  
50  
6
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
I
I
I
C = 50μA, IE = 0  
C = 1mA, IB = 0  
V
E = 50μA, IC = 0  
0.1  
⎯
⎯
μA  
μA  
VCB = 60V, IE = 0  
VEB = 5V, IC = 0  
Emitter Cut-Off Current  
0.1  
IEBO  
ON CHARACTERISTICS (Note 5)  
Collector-Emitter Saturation Voltage  
105  
350  
mV  
VCE(SAT)  
hFE  
⎯
82  
45  
IC = 1A, IB = 50mA  
VCE = 2V, IC = 500mA  
VCE = 2V, IC = 1.5A  
270  
⎯
⎯
⎯
DC Current Gain  
⎯
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
VCB = 10V, IE = 0,  
f = 1MHz  
17  
pF  
Cobo  
fT  
⎯
⎯
⎯
⎯
VCE = 2V, IC = 100mA,  
f = 100MHz  
Current Gain-Bandwidth Product  
180  
MHz  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB with minimum recommended pad layout.  
4. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.  
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.  
1 of 4  
www.diodes.com  
February 2010  
© Diodes Incorporated  
2DC4672  
Document number: DS31636 Rev. 3 - 2  
1234

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