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2C2222A PDF预览

2C2222A

更新时间: 2024-11-22 22:11:35
品牌 Logo 应用领域
SEMICOA 晶体晶体管开关
页数 文件大小 规格书
1页 32K
描述
Chip Type 2C2222A Geometry 0400 Polarity NPN

2C2222A 技术参数

生命周期:Contact Manufacturer零件包装代码:DIE
包装说明:UNCASED CHIP, S-XXUC-N2针数:2
Reach Compliance Code:unknown风险等级:5.51
Is Samacsys:N集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:S-XXUC-N2元件数量:1
端子数量:2封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:UNCASED CHIP
极性/信道类型:NPN认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:NO LEAD端子位置:UNSPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2C2222A 数据手册

  
Data Sheet No. 2C2222A  
Generic Packaged Parts:  
Chip Type 2C2222A  
Geometry 0400  
Polarity NPN  
2N2219, 2N2219A, 2N2222,  
2N2222A  
Chip type 2C2222A by Semicoa  
Semiconductors provides perfor-  
mance similar to these devices.  
Product Summary:  
APPLICATIONS: Designed for general  
purpose switching and amplifier applica-  
tions.  
Part Numbers:  
2N2222A, 2N2222, 2N2219, 2N2219A, 2N2219AL,  
2N2222AUB, SD2222A, SD2222AF, SQ2222A,  
SQ2222AF, 2N5582, 2N6989, 2N6990  
Features: Medium power ratings  
Mechanical Specifications  
Top  
Backside  
Emitter  
Base  
Al - 24 kÅ min.  
Au - 6.5 kÅ nom.  
4.0 mils x 4.0 mils  
4.0 mils x 4.0 mils  
8 mils nominal  
Metallization  
Bonding Pad Size  
Die Thickness  
Chip Area  
20 mils x 20 mils  
Silox Passivated  
Top Surface  
Electrical Characteristics  
TA = 25oC  
Parameter  
BVCEO  
Test conditions  
Min  
40  
Max  
---  
Unit  
V dc  
V dc  
V dc  
nA dc  
---  
IC = 10 mA, IB = 0  
IC = 10 µA, IE = 0  
IE = 10 µA, IC = 0  
VCB = 50 V, IE = 0  
BVCBO  
BVEBO  
ICBO  
75  
---  
6.0  
---  
---  
10  
hFE  
IC = 150 mA dc, VCE = 10 V  
100  
300  
Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less  
than 300 µs, duty cycle less than 2%.  

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