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2SK3919 PDF预览

2SK3919

更新时间: 2024-02-16 23:59:12
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日电电子 - NEC 开关
页数 文件大小 规格书
8页 167K
描述
SWITCHING N-CHANNEL POWER MOSFET

2SK3919 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3919  
SWITCHING  
N-CHANNEL POWER MOS FET  
DESCRIPTION  
ORDERING INFORMATION  
The 2SK3919 is N-channel MOS FET device that  
features a low on-state resistance and excellent switching  
characteristics, and designed for low voltage high current  
applications such as DC/DC converter with synchronous  
rectifier.  
PART NUMBER  
2SK3919  
PACKAGE  
TO-251 (MP-3)  
TO-252 (MP-3ZK)  
2SK3919-ZK  
(TO-251)  
FEATURES  
Low on-state resistance  
RDS(on)1 = 5.6 mMAX. (VGS = 10 V, ID = 32 A)  
Low Ciss: Ciss = 2050 pF TYP.  
5 V drive available  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
(TO-252)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
25  
±20  
V
V
±64  
A
±256  
36  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation  
W
W
°C  
°C  
A
PT2  
1.0  
Channel Temperature  
Tch  
150  
Storage Temperature  
Tstg  
55 to +150  
27  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
EAS  
73  
mJ  
Notes 1. PW 10 µs, Duty Cycle 1%  
2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25 , VGS = 20 0 V  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D17078EJ4V0DS00 (4th edition)  
Date Published January 2005 NS CP(K)  
Printed in Japan  
The mark  
shows major revised points.  
2004  

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