DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3919
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
The 2SK3919 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
PART NUMBER
2SK3919
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3ZK)
2SK3919-ZK
(TO-251)
FEATURES
• Low on-state resistance
RDS(on)1 = 5.6 mΩ MAX. (VGS = 10 V, ID = 32 A)
• Low Ciss: Ciss = 2050 pF TYP.
• 5 V drive available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
(TO-252)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
25
±20
V
V
±64
A
±256
36
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation
W
W
°C
°C
A
PT2
1.0
Channel Temperature
Tch
150
Storage Temperature
Tstg
−55 to +150
27
Single Avalanche Current Note2
Single Avalanche Energy Note2
IAS
EAS
73
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17078EJ4V0DS00 (4th edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2004