2 S A1 4 9 4
Absolute maximum ratings
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3858)
Application : Audio and General Purpose
External Dimensions MT-200
■Electrical Characteristics
■
(Ta=25°C)
(Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
Symbol
ICBO
Conditions
2SA1494
Unit
µA
µA
V
2SA1494
Unit
±0.2
6.0
±0.3
36.4
VCB=–200V
–100max
–100max
–200min
50min
–200
V
±0.2
24.4
2.1
IEBO
VEB=–6V
–200
V
±0.1
2-ø3.2
9
V(BR)CEO
hFE
IC=–50mA
–6
V
VCE=–4V, IC=–8A
IC=–10A, IB=–1A
VCE=–12V, IE=1A
VCB=–10V, f=1MHz
–17
A
a
b
IB
VCE(sat)
fT
–2.5max
20typ
V
MHz
pF
–5
200(Tc=25°C)
150
A
PC
W
°C
°C
2
Tj
COB
500typ
3
+0.2
-0.1
0.65
Tstg
to
–55 +150
to
to
to
+0.2
-0.1
hFE Rank Y(50 100), P(70 140), G(90 180)
1.05
+0.3
-0.1
3.0
±0.1
±0.1
5.45
5.45
■Typical Switching Characteristics (Common Emitter)
B
C
E
VCC
(V)
VBB1
VBB2
(V)
IB1
IB2
tstg
Weight : Approx 18.4g
a. Type No.
b. Lot No.
RL
IC
ton
tf
(V)
(A)
(A)
(µs)
(Ω)
(A)
(µs)
(µs)
–40
4
–10
–10
5
–1
1
0.6typ
0.9typ
0.2typ
–
–
–
IC VBE Temperature Characteristics (Typical)
IC VCE Characteristics (Typical)
VCE(sat) IB Characteristics (Typical)
(VCE=–4V)
–17
–17
–15
–3
–15
–10
–5
–2
–10
–5
0
–1
–50mA
IC=–15A
–10A
IB=–20mA
–5A
0
0
0
–1
–2
–3
–4
0
–1
–2
–3
0
–1
–2
Collector-Emitter Voltage VCE(V)
Base Current IB(A)
Base-Emittor Voltage VBE(V)
–
–
–
j-a t Characteristics
hFE IC Characteristics (Typical)
hFE IC Temperature Characteristics (Typical)
θ
(VCE=–4V)
(VCE=–4V)
300
200
2
1
125˚C
25˚C
Typ
100
100
50
–30˚C
0.5
50
10
20
–0.02
0.1
–0.1
–0.5 –1
–5 –10 –17
–0.02
–0.1
–0.5 –1
–5 –10 –17
1
10
100
Time t(ms)
1000 2000
Collector Current IC(A)
Collector Current IC(A)
–
fT IE Characteristics (Typical)
Safe Operating Area (Single Pulse)
–
Pc Ta Derating
(VCE=–12V)
–50
200
160
120
80
30
20
10ms
Typ
–10
–5
DC
–1
10
–0.5
Without Heatsink
Natural Cooling
40
Without Heatsink
5
0
0
0.02
–0.1
–2
–10
–100
–300
0.1
1
10
0
25
50
75
100
125
150
Collector-Emitter Voltage VCE(V)
Ambient Temperature Ta(˚C)
Emitter Current IE(A)
22