2SA1494Y

更新时间： 2024-11-18 13:04:07

品牌	Logo	应用领域
三垦 - SANKEN		晶体晶体管功率双极晶体管放大器局域网
页数	文件大小	规格书
1页	27K
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中文翻译

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数据手册

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2SA1494Y 数据手册

2 S A1 4 9 4

Absolute maximum ratings

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3858)

Application : Audio and General Purpose

External Dimensions MT-200

■Electrical Characteristics

■

(Ta=25°C)

Symbol

V^CBO

VCEO

VEBO

Symbol

I^CBO

Conditions

2SA1494

Unit

µA

2SA1494

Unit

±0.2

6.0

±0.3

36.4

V^CB=–200V

–100max

–200min

50min

–200

±0.2

24.4

2.1

IEBO

V^EB=–6V

–200

±0.1

2-ø3.2

V(BR)CEO

hFE

I^C=–50mA

–6

V^CE=–4V, IC=–8A

I^C=–10A, IB=–1A

V^CE=–12V, IE=1A

V^CB=–10V, f=1MHz

–17

VCE(sat)

–2.5max

20typ

MHz

–5

200(Tc=25°C)

150

°C

COB

500typ

+0.2

-0.1

0.65

Tstg

–55 +150

+0.2

-0.1

hFE Rank Y(50 100), P(70 140), G(90 180)

1.05

+0.3

-0.1

3.0

±0.1

5.45

■Typical Switching Characteristics (Common Emitter)

VCC

(V)

VBB1

V^BB2

(V)

I^B1

I^B2

tstg

Weight : Approx 18.4g

a. Type No.

b. Lot No.

R^L

ton

(V)

(A)

(µs)

(Ω)

(A)

(µs)

–40

–10

–1

0.6typ

0.9typ

0.2typ

–

IC VBE Temperature Characteristics (Typical)

I^CV^CECharacteristics (Typical)

VCE(sat) IB Characteristics (Typical)

(VCE=–4V)

–17

–15

–3

–15

–10

–5

–2

–10

–5

–1

–50mA

IC=–15A

–10A

I^B=–20mA

–5A

–1

–2

–3

–4

–1

–2

–3

–1

–2

Collector-Emitter Voltage V^CE(V)

Base Current I^B(A)

Base-Emittor Voltage V^BE(V)

–

^j-at Characteristics

hFE IC Characteristics (Typical)

hFE IC Temperature Characteristics (Typical)

(V^CE=–4V)

(VCE=–4V)

300

200

125˚C

25˚C

Typ

100

–30˚C

0.5

–0.02

0.1

–0.1

–0.5 –1

–5 –10 –17

–0.02

–0.1

–0.5 –1

–5 –10 –17

100

Time t(ms)

1000 2000

Collector Current I^C(A)

Collector Current IC(A)

–

fT IE Characteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=–12V)

–50

200

160

120

10ms

Typ

–10

–5

–1

–0.5

Without Heatsink

Natural Cooling

Without Heatsink

0.02

–0.1

–2

–10

–100

–300

0.1

100

125

150

Collector-Emitter Voltage VCE(V)

Ambient Temperature Ta(˚C)

Emitter Current IE(A)

中文翻译

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与2SA1494Y相关器件

型号	品牌	获取价格	描述	数据表
2SA1495	ETC	获取价格
2SA1495H	PANASONIC	获取价格	Power Bipolar Transistor, 0.6A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy
2SA1495O	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 400V V(BR)CEO \| 600MA I(C) \| TO-221VAR
2SA1495OY	PANASONIC	获取价格	Power Bipolar Transistor, 0.6A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy
2SA1495P	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 400V V(BR)CEO \| 600MA I(C) \| TO-221VAR
2SA1495PY	PANASONIC	获取价格	Power Bipolar Transistor, 0.6A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy
2SA1495Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 400V V(BR)CEO \| 600MA I(C) \| TO-221VAR
2SA1495QY	PANASONIC	获取价格	Power Bipolar Transistor, 0.6A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy
2SA1495TX	PANASONIC	获取价格	Power Bipolar Transistor, 0.6A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy
2SA1495Y	PANASONIC	获取价格	Power Bipolar Transistor, 0.6A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy

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