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2SA1494Y PDF预览

2SA1494Y

更新时间: 2024-11-18 13:04:07
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管放大器局域网
页数 文件大小 规格书
2页 116K
描述
Transistor

2SA1494Y 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.6
Base Number Matches:1

2SA1494Y 数据手册

 浏览型号2SA1494Y的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistor  
2SA1494  
DESCRIPTION  
·Collector-Emitter Breakdown Voltage-  
V(BR)CEO= -200V(Min)  
·Good Linearity of hFE  
·Complement to Type 2SC3858  
APPLICATIONS  
·For audio and general purpose applications  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
-200  
-200  
-6  
UNIT  
V
V
V
Collector Current-Continuous  
Base Current-Continuous  
-17  
A
IB  
-5  
A
Collector Power Dissipation  
@ TC=25℃  
PC  
200  
W
TJ  
Junction Temperature  
150  
Storage Temperature Range  
-55~150  
Tstg  
isc Websitewww.iscsemi.cn  

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Power Bipolar Transistor, 0.6A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy