是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 0.115 A | 最大漏极电流 (ID): | 0.115 A |
最大漏源导通电阻: | 7.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 5 pF | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.2 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N7002,215 | NXP | 2N7002 - 60 V, 300 mA N-channel Trench MOSFET TO-236 3-Pin |
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2N7002/D87Z | TI | 115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
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2N7002/E8 | VISHAY | Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Meta |
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|
2N7002/L99Z | TI | 115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
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|
2N7002/S62Z | TI | 115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
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|
2N7002/T3 | NXP | TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, |
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