28C256T
256K EEPROM (32K x 8-Bit)
28C256T
Logic Diagram
FEATURES:
DESCRIPTION:
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RAD-PAK® radiation-hardened against natural space radia-
tion
Total dose hardness:
- > 100 Krad (Si), dependent upon space mission
Excellent Single Event Effects @ 25C:
- SELTH LET: (Device)> 120MeV cm2/mg
- SEUTH LET (Memory Cells): > 90 MeV cm2/mg
- SEUTH LET (Write mode): > 18 MeV cm2/mg
- SEUTH LET (Read mode): > 40 MeV cm2/mg
Package:
- 28 pin RAD-PAK® flat pack
- 28 pin RAD-PAK® DIP
- JEDEC approved byte wide pinout
High Speed:
- 120, 150, and 200 ns maximum access times available
High endurance:
Maxwell Technologies’ 28C256T high density 256k-bit
EEPROM microcircuit features a greater than 100 krad (Si)
total dose tolerance, depending upon space mission. The
28C256T is capable of in-system electrical byte and page pro-
grammability. It has a 64-Byte page programming function to
make its erase and write operations faster. It also features
data polling to indicate the completion of erase and program-
ming operations.
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Maxwell Technologies' patented RAD-PAK® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, RAD-PAK® provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Maxwells’ Class S.
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- 10,000 erase/write (in Page Mode), 10-year data
retention
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Page Write Mode:
- 1 to 64 bytes
Low power dissipation:
- 15mA active current (cycle = 1 µs)
- 20µA standby current (CE = VCC
)
1
03.20.15 Rev 6
All data sheets are subject to change without notice
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