Datasheet > 27C16Q450

27C16Q450

更新时间： 2024-11-10 21:55:19

品牌	Logo	应用领域
美国国家半导体 - NSC		军事可编程只读存储器
页数	文件大小	规格书
8页	111K
描述
16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified

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数据手册

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27C16Q450 数据手册

January 1989

27C16

16,384-Bit (2048 x 8) UV Erasable CMOS PROM

Military Qualified

General Description

Features

Access time down to 450 ns

The 27C16 is a high speed 16K UV erasable and electrically

reprogrammable CMOS EPROM, ideally suited for applica-

tions where fast turnaround, pattern experimentation and

low power consumption are important requirements.

Low CMOS power consumption

Ð Active Power: 26.25 mW max

Ð Standby Power: 0.53 mW max (98% savings)

Performance compatible to NSC800^TMCMOS micro-

processor

The 27C16 is packaged in a 24-pin dual-in-line package with

transparent lid. The transparent lid allows the user to ex-

pose the chip to ultraviolet light to erase the bit pattern. A

new pattern can then be written into the device by following

the programming procedure.

Single 5V power supply

Pin compatible to MM2716 and higher density EPROMs

StaticÐno clocks required

This EPROM is fabricated with the reliable, high volume,

TTL compatible inputs/outputs

time proven, P CMOS^TMsilicon gate technology.

TRI-STATE output

Windowed DIP Package

The 27C16 specified on this data sheet is fully compliant

with MIL-STD-883, Revision C.

Specifications guaranteed over full military temperature

range ( 55 C to 125 C)

Block Diagram

Pin Names

Addresses

A0–A10

Chip Enable

Output Enable

Outputs

O –O

PGM

Program

No Connect

TL/D/10329–1

TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.

NS800^TMare P CMOS^TMtrademarks of National Semiconductor Corporation.

1995 National Semiconductor Corporation

TL/D/10329

RRD-B30M105/Printed in U. S. A.

12 3 4 5 6 7 8

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