Datasheet > 26VF016B

26VF016B

更新时间： 2024-11-09 12:56:39

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
77页	2849K
描述
3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory

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26VF016B 数据手册

SST26VF016B

3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory

• Security ID

Features

- One-Time Programmable (OTP) 2 KByte,

Secure ID

• Single Voltage Read and Write Operations

- 2.7-3.6V

- 64 bit unique, factory pre-programmed

identifier

• Serial Interface Architecture

- Nibble-wide multiplexed I/O’s with SPI-like serial

command structure

- User-programmable area

• Temperature Range

- Mode 0 and Mode 3

- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol

• High Speed Clock Frequency

- 104 MHz max

- Industrial: -40°C to +85°C

• Packages Available

- 8-contact WDFN (6mm x 5mm)

- 8-lead SOIJ (5.28 mm)

- 8-lead SOIC (3.90 mm)

• Burst Modes

- Continuous linear burst

- 8/16/32/64 Byte linear burst with wrap-around

• All devices are RoHS compliant

• Superior Reliability

Product Description

- Endurance: 100,000 Cycles (min)

The Serial Quad I/O™ (SQI™) family of flash-memory

devices features a six-wire, 4-bit I/O interface that

allows for low-power, high-performance operation in a

low pin-count package. SST26VF016B also supports

full command-set compatibility to traditional Serial

Peripheral Interface (SPI) protocol. System designs

using SQI flash devices occupy less board space and

ultimately lower system costs.

- Greater than 100 years Data Retention

• Low Power Consumption:

- Active Read current: 15 mA (typical @ 104 MHz)

- Standby Current: 15 µA (typical)

• Fast Erase Time

- Sector/Block Erase: 18 ms (typ), 25 ms (max)

- Chip Erase: 35 ms (typ), 50 ms (max)

All members of the 26 Series, SQI family are manufac-

tured with proprietary, high-performance CMOS Super-

Flash® technology. The split-gate cell design and thick-

oxide tunneling injector attain better reliability and man-

ufacturability compared with alternate approaches.

• Page-Program

- 256 Bytes per page in x1 or x4 mode

• End-of-Write Detection

- Software polling the BUSY bit in status register

• Flexible Erase Capability

SST26VF016B significantly improves performance and

reliability, while lowering power consumption. These

devices write (Program or Erase) with a single power

supply of 2.7-3.6V. The total energy consumed is a

function of the applied voltage, current, and time of

application. Since for any given voltage range, the

SuperFlash technology uses less current to program

and has a shorter erase time, the total energy con-

sumed during any Erase or Program operation is less

than alternative flash memory technologies.

- Uniform 4 KByte sectors

- Four 8 KByte top and bottom parameter overlay

blocks

- One 32 KByte top and bottom overlay blocks

- Uniform 64 KByte overlay blocks

• Write-Suspend

- Suspend Program or Erase operation to access

another block/sector

• Software Reset (RST) mode

• Software Write Protection

SST26VF016B is offered in 8-contact WDFN (6 mm x

5 mm), 8-lead SOIJ (5.28 mm), and 8-lead SOIC

(3.90 mm). See Figures 2-1 through 2-3 for pin assign-

ments.

- Individual-Block Write Protection with permanent

lock-down capability

- 64 KByte blocks, two 32 KByte blocks, and

eight 8 KByte parameter blocks

- Read Protection on top and bottom 8 KByte

parameter blocks

 2015 Microchip Technology Inc.

DS20005262B-page 1

12 3 4 5 6 7...77

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与26VF016B相关器件

型号	品牌	获取价格	描述	数据表
26VF064B-I/MF	MICROCHIP	获取价格	3.0V Serial Quad I/O (SQI) Flash Memory
26VF064B-I/SM	MICROCHIP	获取价格	3.0V Serial Quad I/O (SQI) Flash Memory
26VF064B-I/SO	MICROCHIP	获取价格	3.0V Serial Quad I/O (SQI) Flash Memory
26VF064B-I/TD	MICROCHIP	获取价格	3.0V Serial Quad I/O (SQI) Flash Memory
26VLCD0464TM3	ETC	获取价格	＂MONITOR LCD 10.4＂＂＂
26VLCD0464TSC	ETC	获取价格	＂MONITOR LCD 10.4＂＂＂
26WV01826	SWITCH	获取价格	Interconnection Device,
26WV02426	SWITCH	获取价格	Interconnection Device,
26WV03626	SWITCH	获取价格	Interconnection Device,
26WV04826	SWITCH	获取价格	Interconnection Device,

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