Datasheet > 26VF064B-I/SO

26VF064B-I/SO

更新时间： 2024-11-09 12:27:11

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
76页	1135K
描述
3.0V Serial Quad I/O (SQI) Flash Memory

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26VF064B-I/SO 数据手册

SST26VF064B / SST26VF064BA

3.0V Serial Quad I/O (SQI) Flash Memory

• Temperature Range

Features

- Industrial: -40°C to +85°C

• Single Voltage Read and Write Operations

- 2.7-3.6V

• Packages Available

- 8-contact WSON (6mm x 5mm)

- 8-lead SOIC (200 mil)

- 16-lead SOIC (300 mil)

• Serial Interface Architecture

- Nibble-wide multiplexed I/O’s with SPI-like serial

command structure

- 24-ball TBGA (6mm x 8mm)

- Mode 0 and Mode 3

• All devices are RoHS compliant

- x1/x2/x4 Serial Peripheral Interface (SPI) Proto-

col

Product Description

• High Speed Clock Frequency

- 104 MHz max

The Serial Quad I/O™ (SQI™) family of flash-memory

devices features a six-wire, 4-bit I/O interface that

allows for low-power, high-performance operation in a

low pin-count package. SST26VF064B/064BA also

support full command-set compatibility to traditional

Serial Peripheral Interface (SPI) protocol. System

designs using SQI flash devices occupy less board

space and ultimately lower system costs.

• Burst Modes

- Continuous linear burst

- 8/16/32/64 Byte linear burst with wrap-around

• Superior Reliability

- Endurance: 100,000 Cycles (min)

- Greater than 100 years Data Retention

• Low Power Consumption:

All members of the 26 Series, SQI family are manufac-

tured with proprietary, high-performance CMOS Super-

Flash® technology. The split-gate cell design and thick-

oxide tunneling injector attain better reliability and man-

ufacturability compared with alternate approaches.

- Active Read current: 15 mA (typical @ 104 MHz)

- Standby Current: 15 µA (typical)

• Page-Program

- 256 Bytes per page in x1 or x4 mode

• End-of-Write Detection

The SST26VF064B/064BA significantly improve per-

formance and reliability, while lowering power con-

sumption. These devices write (Program or Erase) with

a single power supply of 2.7-3.6V. The total energy

consumed is a function of the applied voltage, current,

and time of application. Since for any given voltage

range, the SuperFlash technology uses less current to

program and has a shorter erase time, the total energy

consumed during any Erase or Program operation is

less than alternative flash memory technologies.

- Software polling the BUSY bit in status register

• Flexible Erase Capability

- Uniform 4 KByte sectors

- Four 8 KByte top and bottom parameter overlay

blocks

- One 32 KByte top and bottom overlay block

- Uniform 64 KByte overlay blocks

• Write-Suspend

SST26VF064B/064BA are offered in 8-contact WSON

(6 mm x 5 mm), 8-lead SOIC (200 mil), 16-lead SOIC

(300 mil), and 24-ball TBGA. See Figure 2-2 for pin

assignments.

- Suspend Program or Erase operation to access

another block/sector

• Software Reset (RST) mode

• Software Write Protection

- Individual Block-Locking

Two configurations are available upon order:

SST26VF064B default at power-up has the WP# and

Hold# pins enabled and SST26VF064BA default at

power-up has the WP# and Hold# pins disabled.

- 64 KByte blocks, two 32 KByte blocks, and

eight 8 KByte parameter blocks

• Security ID

- One-Time Programmable (OTP) 2 KByte,

Secure ID

- 64 bit unique, factory pre-programmed

identifier

- User-programmable area

 2013 Microchip Technology Inc.

Advance Information

DS25119C-page 1

12 3 4 5 6 7...76

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与26VF064B-I/SO相关器件

型号	品牌	获取价格	描述	数据表
26VF064B-I/TD	MICROCHIP	获取价格	3.0V Serial Quad I/O (SQI) Flash Memory
26VLCD0464TM3	ETC	获取价格	＂MONITOR LCD 10.4＂＂＂
26VLCD0464TSC	ETC	获取价格	＂MONITOR LCD 10.4＂＂＂
26WV01826	SWITCH	获取价格	Interconnection Device,
26WV02426	SWITCH	获取价格	Interconnection Device,
26WV03626	SWITCH	获取价格	Interconnection Device,
26WV04826	SWITCH	获取价格	Interconnection Device,
26WV07226	SWITCH	获取价格	Interconnection Device,
26WV12026	SWITCH	获取价格	Interconnection Device,
26X4H1	OMRON	获取价格	Omron Date Codes

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