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25C080T-E/SNC27 PDF预览

25C080T-E/SNC27

更新时间: 2024-11-24 14:39:19
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
22页 293K
描述
1K X 8 SPI BUS SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, MS-012, SOIC-8

25C080T-E/SNC27 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:SOIC
包装说明:0.150 INCH, PLASTIC, MS-012, SOIC-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.22
最大时钟频率 (fCLK):3 MHzJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
内存密度:8192 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:1024 words
字数代码:1000工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:1KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:1.75 mm串行总线类型:SPI
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3.91 mm
最长写入周期时间 (tWC):5 msBase Number Matches:1

25C080T-E/SNC27 数据手册

 浏览型号25C080T-E/SNC27的Datasheet PDF文件第2页浏览型号25C080T-E/SNC27的Datasheet PDF文件第3页浏览型号25C080T-E/SNC27的Datasheet PDF文件第4页浏览型号25C080T-E/SNC27的Datasheet PDF文件第5页浏览型号25C080T-E/SNC27的Datasheet PDF文件第6页浏览型号25C080T-E/SNC27的Datasheet PDF文件第7页 
Not recommended for new designs –  
Please use 25AA080A/B or 25LC080A/B.  
25AA080/25LC080/25C080  
8K SPIBus Serial EEPROM  
Device Selection Table  
Description:  
The Microchip Technology Inc. 25AA080/25LC080/  
Part  
Number  
VCC  
Range  
Max. Clock  
Frequency  
Temp.  
Ranges  
25C080 (25XX080*) are 8 Kbit Serial Electrically  
Erasable PROMs. The memory is accessed via a  
simple Serial Peripheral Interface™ (SPI™) compati-  
ble serial bus. The bus signals required are a clock  
input (SCK) plus separate data in (SI) and data out  
(SO) lines. Access to the device is controlled through a  
Chip Select (CS) input.  
25AA080  
25LC080  
25C080  
1.8-5.5V  
2.5-5.5V  
4.5-5.5V  
1 MHz  
2 MHz  
3 MHz  
I
I
I,E  
Features:  
Communication to the device can be paused via the  
hold pin (HOLD). While the device is paused, transi-  
tions on its inputs will be ignored, with the exception of  
chip select, allowing the host to service higher priority  
interrupts.  
• Low-power CMOS technology:  
- Write current: 3 mA maximum  
- Read current: 500 µA typical  
- Standby current: 500 nA typical  
• 1024 x 8-bit organization  
• 16 byte page  
Package Types  
• Write cycle time: 5 ms max.  
• Self-timed erase and write cycles  
• Block write protection:  
PDIP/SOIC  
CS  
1
8
VCC  
SO  
WP  
VSS  
2
3
4
7
6
5
HOLD  
SCK  
SI  
- Protect none, 1/4, 1/2 or all of array  
• Built-in write protection:  
- Power-on/off data protection circuitry  
- Write enable latch  
- Write-protect pin  
• Sequential read  
Block Diagram  
• High reliability:  
Status  
Register  
HV Generator  
- Endurance: 1 M cycles  
- Data retention: > 200 years  
- ESD protection: > 4000V  
• 8-pin PDIP and SOIC (150 mil)  
Temperature ranges supported:  
- Industrial (I):  
- Automotive (E) (25C080):  
EEPROM  
Array  
Memory  
Control  
Logic  
X
-40°C to +85°C  
-40°C to +125°C  
I/O Control  
Logic  
Dec  
Page Latches  
Y Decoder  
SI  
SO  
CS  
SCK  
Sense Amp.  
R/W Control  
HOLD  
WP  
VCC  
VSS  
*25XX080 is used in this document as a generic part number for the  
25AA080/25LC080/25C080 devices.  
SPI™ is a trademark of Motorola Inc.  
2004 Microchip Technology Inc.  
DS21230D-page 1  

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