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25AA640-I/SNB21 PDF预览

25AA640-I/SNB21

更新时间: 2024-11-09 15:28:39
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
24页 360K
描述
8K X 8 SPI BUS SERIAL EEPROM, PDSO8, 3.90 MM, PLASTIC, SOIC-8

25AA640-I/SNB21 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:SOIC
包装说明:SOP,针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.24
其他特性:1000K ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS最大时钟频率 (fCLK):1 MHz
数据保留时间-最小值:200JESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
内存密度:65536 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:8192 words字数代码:8000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:8KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.75 mm
串行总线类型:SPI最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3.9 mm最长写入周期时间 (tWC):5 ms
Base Number Matches:1

25AA640-I/SNB21 数据手册

 浏览型号25AA640-I/SNB21的Datasheet PDF文件第2页浏览型号25AA640-I/SNB21的Datasheet PDF文件第3页浏览型号25AA640-I/SNB21的Datasheet PDF文件第4页浏览型号25AA640-I/SNB21的Datasheet PDF文件第5页浏览型号25AA640-I/SNB21的Datasheet PDF文件第6页浏览型号25AA640-I/SNB21的Datasheet PDF文件第7页 
Not recommended for new designs –  
Please use 25AA640A or 25LC640A.  
25AA640/25LC640  
64K SPI Bus Serial EEPROM  
Description:  
Device Selection Table  
Part  
Number  
VCC  
Range  
Max Clock  
Frequency  
Temp  
Ranges  
The Microchip Technology Inc. 25AA640/25LC640  
(25XX640*) is a 64 Kbit Serial Electrically Erasable  
PROM [EEPROM]. The memory is accessed via a  
simple Serial Peripheral Interface (SPI) compatible  
serial bus. The bus signals required are a clock input  
(SCK) plus separate data in (SI) and data out (SO)  
lines. Access to the device is controlled through a Chip  
Select (CS) input.  
25AA640  
25LC640  
25LC640  
1.8-5.5V  
2.5-5.5V  
4.5-5.5V  
1 MHz  
2 MHz  
I
I
3/2.5 MHz  
I, E  
Features:  
Communication to the device can be paused via the  
hold pin (HOLD). While the device is paused,  
transitions on its inputs will be ignored, with the  
exception of Chip Select, allowing the host to service  
higher priority interrupts.  
• Low-Power CMOS Technology  
- Write current: 3 mA, typical  
- Read current: 500 μA, typical  
- Standby current: 500 nA, typical  
• 8192 x 8 Bit Organization  
• 32 Byte Page  
Block Diagram  
• Write Cycle Time: 5 ms max.  
• Self-Timed Erase and Write Cycles  
• Block Write Protection  
STATUS  
HV Generator  
Register  
- Protect none, 1/4, 1/2 or all of array  
• Built-in Write Protection  
EEPROM  
- Power on/off data protection circuitry  
- Write enable latch  
Memory  
Control  
Logic  
I/O Control  
Logic  
Array  
XDEC  
- Write-protect pin  
• Sequential Read  
Page  
Latches  
• High Reliability  
- Data retention: > 200 years  
- ESD protection: > 4000V  
• 8-pin PDIP, SOIC and TSSOP Packages  
Temperature Ranges Supported:  
- Industrial (I): -40°C to +85°C  
- Automotive (E): -40°C to +125°C  
SI  
SO  
Y Decoder  
CS  
SCK  
Sense Amp.  
R/W Control  
HOLD  
WP  
VCC  
VSS  
Package Types  
PDIP/SOIC  
TSSOP  
VCC  
HOLD  
SCK  
SI  
CS  
SO  
1
2
3
4
8
7
6
5
8
7
6
5
1
2
3
4
SCK  
SI  
VSS  
WP  
HOLD  
VCC  
CS  
WP  
VSS  
SO  
*25XX640 is used in this document as a generic part number for the 25AA640/25LC640 devices.  
© 2008 Microchip Technology Inc.  
DS21223H-page 1  

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