Datasheet > 存储 > EEPROM> 24FC1025T-ISM

24FC1025T-ISM

更新时间： 2024-10-30 12:52:59

品牌	Logo	应用领域
美国微芯 - MICROCHIP		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
28页	447K
描述
1024K I2C Serial EEPROM

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中文翻译

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数据手册

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24FC1025T-ISM 数据手册

24AA1025/24LC1025/24FC1025

1024K I²C^™Serial EEPROM

This device is capable of both random and sequential

reads. Reads may be sequential within address

Device Selection Table:

Part

Number

VCC

Range

Max. Clock

Frequency

Temp.

Ranges

boundaries 0000h to FFFFh and 10000h to 1FFFFh.

Functional address lines allow up to four devices on the

same data bus. This allows for up to 4 Mbits total

system EEPROM memory. This device is available in

the standard 8-pin PDIP, SOIC and SOIJ packages.

24AA1025

24LC1025

24FC1025

1.7-5.5V

2.5-5.5V

1.8-5.5V

400 kHz^†

400 kHz*

1 MHz^‡

I, E

^†100 kHz for VCC < 2.5V

Package Type

*100 kHz for VCC < 4.5V, E-temp

^‡400 kHz for VCC < 2.5V

PDIP

VCC

Features:

A2*

VSS

SCL

SDA

• Low-Power CMOS Technology:

- Read current 450 A, maximum

- Standby current 5 A, maximum

• 2-Wire Serial Interface, I²C™ Compatible

• Cascadable up to Four Devices

SOIJ/SOIC

VCC

• Schmitt Trigger Inputs for Noise Suppression

• Output Slope Control to Eliminate Ground Bounce

• 100 kHz and 400 kHz Clock Compatibility

• 1 MHz Clock for FC Versions

A2*

SCL

SDA

VSS

• Page Write Time 3 ms, typical

• Self-Timed Erase/Write Cycle

*A2 must be tied to VCC.

• 128-Byte Page Write Buffer

Block Diagram

• Hardware Write-Protect

• ESD Protection >400V

A0A1 WP

• More than 1 Million Erase/Write Cycles

• Data Retention >200 Years

HV Generator

• Factory Programming Available

• Packages include 8-lead PDIP, SOIJ and SOIC

• Pb-Free and RoHS Compliant

• Temperature Ranges:

I/O

Control

Logic

Memory

Control

Logic

EEPROM

Array

XDEC

Page Latches

- Industrial (I):

-40C to +85C

I/O

SCL

- Automotive (E): -40C to +125C

YDEC

SDA

Description:

The Microchip Technology Inc. 24AA1025/24LC1025/

24FC1025 (24XX1025*) is a 128K x 8 (1024K bit)

Serial Electrically Erasable PROM, capable of

operation across a broad voltage range (1.7V to 5.5V).

It has been developed for advanced, low-power

applications such as personal communications or data

acquisition. This device has both byte write and page

write capability of up to 128 bytes of data.

Sense AMP

R/W Control

VSS

*24XX1025 is used in this document as a generic part number

for the 24AA1025/24LC1025/24FC1025 devices.

 2005-2012 Microchip Technology Inc.

DS21941K-page 1

12 3 4 5 6 7...28

中文翻译

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与24FC1025T-ISM相关器件

型号	品牌	获取价格	描述	数据表
24FC1026	MICROCHIP	获取价格	1024K I2C? CMOS Serial EEPROM 100 kHz and 400 kHz Clock Compatibility
24FC1026E/P	MICROCHIP	获取价格	1024K I2Cï¿½ï¿½ Serial EEPROM
24FC1026-E/P	MICROCHIP	获取价格	I2C/2-WIRE SERIAL EEPROM
24FC1026E/SM	MICROCHIP	获取价格	1024K I2Cï¿½ï¿½ Serial EEPROM
24FC1026-E/SM	MICROCHIP	获取价格	I2C/2-WIRE SERIAL EEPROM
24FC1026E/SN	MICROCHIP	获取价格	1024K I2Cï¿½ï¿½ Serial EEPROM
24FC1026-E/SN	MICROCHIP	获取价格	I2C/2-WIRE SERIAL EEPROM
24FC1026-E/ST	MICROCHIP	获取价格	I2C/2-WIRE SERIAL EEPROM
24FC1026I/P	MICROCHIP	获取价格	1024K I2Cï¿½ï¿½ Serial EEPROM
24FC1026-I/P	MICROCHIP	获取价格	128K X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8, 0.300 INCH, ROHS COMPLIANT, PLASTIC, DIP-8

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