是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | TSSOP, TSSOP8,.25 | Reach Compliance Code: | compliant |
Factory Lead Time: | 5 weeks | 风险等级: | 5.51 |
最长访问时间: | 32 ns | 最大时钟频率 (fCLK): | 16 MHz |
I/O 类型: | COMMON/SEPARATE | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e3 | 长度: | 4.4 mm |
内存密度: | 1048576 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 8 | 湿度敏感等级: | 1 |
功能数量: | 1 | 端子数量: | 8 |
字数: | 131072 words | 字数代码: | 128000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 125 °C |
最低工作温度: | -40 °C | 组织: | 128KX8 |
输出特性: | 3-STATE | 可输出: | NO |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSSOP |
封装等效代码: | TSSOP8,.25 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 并行/串行: | SERIAL |
峰值回流温度(摄氏度): | 260 | 电源: | 1.8/2 V |
认证状态: | Not Qualified | 反向引出线: | NO |
座面最大高度: | 1.2 mm | 最大待机电流: | 0.000012 A |
最小待机电流: | 1.7 V | 子类别: | SRAMs |
最大压摆率: | 0.01 mA | 最大供电电压 (Vsup): | 2.2 V |
最小供电电压 (Vsup): | 1.7 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | AUTOMOTIVE |
端子面层: | Matte Tin (Sn) - annealed | 端子形式: | GULL WING |
端子节距: | 0.65 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 宽度: | 3 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
23A1024-E/ST/P | MICROCHIP |
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1Mbit SPI Serial SRAM with SDI and SQI Interface | |
23A1024-I/P | MICROCHIP |
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STANDARD SRAM | |
23A1024-I/SN | MICROCHIP |
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1Mbit SPI Serial SRAM with SDI and SQI Interface | |
23A1024-I/ST | MICROCHIP |
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1Mbit SPI Serial SRAM with SDI and SQI Interface | |
23A1024-I/ST/P | MICROCHIP |
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1Mbit SPI Serial SRAM with SDI and SQI Interface | |
23A1024T-E/SN | MICROCHIP |
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1Mbit SPI Serial SRAM with SDI and SQI Interface | |
23A1024T-E/ST/P | MICROCHIP |
获取价格 |
1Mbit SPI Serial SRAM with SDI and SQI Interface | |
23A1024T-I/SN | MICROCHIP |
获取价格 |
STANDARD SRAM | |
23A1024T-I/ST | MICROCHIP |
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STANDARD SRAM | |
23A1024T-I/ST/P | MICROCHIP |
获取价格 |
1Mbit SPI Serial SRAM with SDI and SQI Interface |