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20MT120UFAPBF PDF预览

20MT120UFAPBF

更新时间： 2024-01-12 08:30:40
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率控制双极性晶体管栅局域网
页数 文件大小 规格书
11页 222K
描述
"Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A

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20MT120UFAPBF 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred包装说明：FLANGE MOUNT, R-XUFM-P18
针数：18Reach Compliance Code：compliant
风险等级：5.63其他特性：UL APPROVED
外壳连接：ISOLATED最大集电极电流 (IC)：40 A
集电极-发射极最大电压：1200 V配置：BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE
JESD-30 代码：R-XUFM-P18元件数量：4
端子数量：18封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：NO
端子形式：PIN/PEG端子位置：UPPER
处于峰值回流温度下的最长时间：40晶体管应用：POWER CONTROL
晶体管元件材料：SILICONBase Number Matches：1

20MT120UFAPBF 数据手册

 浏览型号20MT120UFAPBF的Datasheet PDF文件第1页浏览型号20MT120UFAPBF的Datasheet PDF文件第3页浏览型号20MT120UFAPBF的Datasheet PDF文件第4页浏览型号20MT120UFAPBF的Datasheet PDF文件第5页浏览型号20MT120UFAPBF的Datasheet PDF文件第6页浏览型号20MT120UFAPBF的Datasheet PDF文件第7页 
20MT120UFAPbF  
Vishay Semiconductors  
"Full Bridge" IGBT MTP  
(Ultrafast NPT IGBT), 20 A  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
-
MAX. UNITS  
Collector to emitter breakdown voltage  
V(BR)CES  
VGE = 0 V, IC = 250 μA  
1200  
-
V
Temperature coefficient of breakdown voltage V(BR)CES/TJ VGE = 0 V, IC = 3 mA (25 to 125 °C)  
-
-
-
-
-
-
4
-
-
-
-
-
-
+ 1.3  
3.29  
4.42  
3.87  
5.32  
3.99  
-
-
V/°C  
VGE = 15 V, IC = 20 A  
VGE = 15 V, IC = 40 A  
3.59  
4.66  
4.11  
5.70  
4.27  
6
Collector to emitter saturation voltage  
VCE(on)  
VGE = 15 V, IC = 20 A, TJ = 125 °C  
VGE = 15 V, IC = 40 A, TJ = 125 °C  
VGE = 15 V, IC = 20 A, TJ = 150 °C  
VCE = VGE, IC = 250 μA  
V
Gate threshold voltage  
VGE(th)  
VGE(th)/TJ  
gfe  
Temperature coefficient of threshold voltage  
Transconductance  
VCE = VGE, IC = 3 mA (25 to 125 °C)  
VCE = 50 V, IC = 20 A, PW = 80 μs  
VGE = 0 V, VCE = 1200 V, TJ = 25 °C  
VGE = 0 V, VCE = 1200 V, TJ = 125 °C  
- 14  
17.5  
-
-
mV/°C  
S
-
250  
3.0  
9.0  
250  
μA  
(1)  
Zero gate voltage collector current  
Gate to emitter leakage current  
ICES  
0.7  
2.9  
-
mA  
nA  
V
GE = 0 V, VCE = 1200 V, TJ = 150 °C  
IGES  
VGE 20 V  
=
Note  
(1)  
ICES includes also opposite leg overall leakage  
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
176  
19  
MAX. UNITS  
Total gate charge (turn-on)  
Gate to emitter charge (turn-on)  
Gate to collector charge (turn-on)  
Turn-on switching loss  
Turn-off switching loss  
Total switching loss  
Qg  
-
-
-
-
-
-
-
-
-
-
-
-
264  
IC = 20 A  
VCC = 600 V  
GE = 15 V  
Qge  
Qgc  
30  
nC  
mJ  
pF  
V
89  
134  
VCC = 600 V, IC = 20 A, VGE = 15 V,  
Rg = 5 , L = 200 μH, TJ = 25 °C,  
energy losses include tail and  
diode reverse recovery  
Eon  
0.513 0.770  
0.402 0.603  
0.915 1.373  
0.930 1.395  
0.610 0.915  
1.540 2.310  
Eoff  
Etot  
VCC = 600 V, IC = 20 A, VGE = 15 V,  
Rg = 5 , L = 200 μH, TJ = 125 °C,  
energy losses include tail and  
diode reverse recovery  
Turn-on switching loss  
Turn-off switching loss  
Total switching loss  
Eon  
Eoff  
Etot  
Input capacitance  
Cies  
Coes  
Cres  
2530  
344  
78  
3790  
516  
VGE = 0 V  
VCC = 30 V  
f = 1.0 MHz  
Output capacitance  
Reverse transfer capacitance  
117  
TJ = 150 °C, IC = 120 A  
Reverse bias safe operating area  
Short circuit safe operating area  
RBSOA  
SCSOA  
V
CC = 1000 V, Vp = 1200 V  
Fullsquare  
-
Rg = 5 , VGE = + 15 V to 0 V  
TJ = 150 °C  
VCC = 900 V, Vp = 1200 V  
10  
-
μs  
Rg = 5 , VGE = + 15 V to 0 V  
www.vishay.com  
2
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number: 94470  
Revision: 03-Aug-10  
1234567...11

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