20MT120UFPBF

更新时间： 2024-01-15 23:44:36

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管功率控制双极性晶体管栅局域网
页数	文件大小	规格书
11页	222K
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20MT120UFPBF 数据手册

20MT120UFAPbF

Vishay Semiconductors

"Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A

FEATURES

• Ultrafast Non Punch Through (NPT) technology

• Positive V_CE(on)temperature coefficient

• 10 μs short circuit capability

• HEXFRED^®antiparallel diodes with ultrasoft reverse

recovery

• Low diode V_F

• Square RBSOA

• Al₂O₃DBC substrate

MTP

• Very low stray inductance design for high speed operation

• UL approved file E78996

• Speed 8 kHz to 60 kHz

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

PRODUCT SUMMARY

BENEFITS

V_CES

1200 V

20 A

• Optimized for welding, UPS and SMPS applications

• Rugged with ultrafast performance

• Outstanding ZVS and hard switching operation

• Low EMI, requires less snubbing

• Excellent current sharing in parallel operation

• Direct mounting to heatsink

I_Cat T_C= 96 °C

V_CE(on)(typical)

at I_C= 20 A, 25 °C

3.29 V

• PCB solderable terminals

• Very low junction to case thermal resistance

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_CES

I_C

TEST CONDITIONS

MAX.

1200

UNITS

Collector to emitter breakdown voltage

Continuous collector current

Pulsed collector current

T_C= 96 °C

I_CM

100

Clamped inductive load current

Diode maximum forward current

Gate to emitter voltage

I_LM

I_FM

V_GE

RMS isolation voltage

V_ISOL

Any terminal to case, t = 1 minute

T_C= 25 °C

2500

240

Maximum power dissipation (only IGBT)

P_D

_C= 100 °C

Document Number: 94470

Revision: 03-Aug-10

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

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