20N06(F,B,H)
20A mps,60 Volts N-CHANNEL MOSFET
FEATURE
20A,60V,RDS(ON)=36mΩ@VGS=10V/10A
Low gate charge
Low Ciss
Fast switching
TO-220AB
20N06
ITO-220AB
20N06F
100% avalanche tested
Improved dv/dt capability
TO-263
20N06B
TO-262
20N06H
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
20N06
UNIT
Drain-Source Voltage
VDSS
VGSS
ID
60
±20
20
V
Gate-Source Voltage
Continuous Drain Current
A
Pulsed Drain Current(Note1)
IDM
80
Single Pulse Avalanche Energy (Note 2)
Avalanche Current(Note1)
EAS
155
mJ
A
IAR
20
Repetitive Avalanche Energy (Note1)
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
EAR
5.3
mJ
V/ns
℃
dv/dt
TJ,TSTG
7.0
-55 to +150
TL
260
℃
10
lbf·in
N·m
Mounting Torque
6-32 or M3 screw
1.1
Thermal Characteristics
TO-262
TO-263
Units
ITO-220
TO-220
Parameter
Symbol
Maximum Junction-to-Case
Maximum Power Dissipation
RthJC
PD
4
2
2
℃/W
TC=25℃
31.5
62.5
62.5
W
- 页码 -
Rev. 14-1
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