20MT120UFPBF

更新时间： 2024-01-04 02:01:26

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管功率控制双极性晶体管栅局域网
页数	文件大小	规格书
11页	222K
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20MT120UFPBF 数据手册

20MT120UFAPbF

Vishay Semiconductors

"Full Bridge" IGBT MTP

(Ultrafast NPT IGBT), 20 A

100

= 18V

= 10A

= 20A

= 40A

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

(V)

Fig. 7 - Typical IGBT Output Characteristics

T_J= 125 °C; t_p= 80 μs

Fig. 10 - Typical V_CEvs. V_GE

T_J= 25 °C

120

= 10A

= 20A

= 40A

-40°C

25°C

100

125°C

0.0

1.0

2.0

3.0

(V)

4.0

5.0

(V)

Fig. 8 - Typical Diode Forward Characteristics

t_p= 80 μs

Fig. 11 - Typical V_CEvs. V_GE

T_J= 125 °C

300

250

200

150

100

= 40A

= 20A

= 10A

= 25°C

= 150°C

(V)

Fig. 9 - Typical V_CEvs. V_GE

T_J= - 40 °C

Fig. 12 - Typical Transfer Characteristics

_CE= 50 V; t_p= 10 μs

Document Number: 94470

Revision: 03-Aug-10

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

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