20MT120UFPBF

更新时间： 2024-01-26 01:13:14

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管功率控制双极性晶体管栅局域网
页数	文件大小	规格书
11页	222K
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数据手册

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20MT120UFPBF 数据手册

20MT120UFAPbF

Vishay Semiconductors

"Full Bridge" IGBT MTP

(Ultrafast NPT IGBT), 20 A

DIODE SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP. MAX. UNITS

I_C= 20 A

I_C= 40 A

2.48

3.28

2.44

3.45

2.21

420

2.94

3.90

2.84

4.14

2.93

630

150

Diode forward voltage drop

V_FM

I_C= 20 A, T_J= 125 °C

I_C= 40 A, T_J= 125 °C

I_C= 20 A, T_J= 150 °C

Reverse recovery energy of the diode

Diode reverse recovery time

E_rec

t_rr

μJ

V_GE= 15 V, R_g= 5 , L = 200 μH

V_CC= 600 V, I_C= 20 A

T_J= 125 °C

Peak reverse recovery current

I_rr

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

- 40

TYP. MAX. UNITS

Operating junction temperature range

Storage temperature range

T_J

150

125

0.64

0.83

°C

T_Stg

IGBT

0.53

0.69

0.06

Junction to case

Diode

R_thJC

R_thCS

°C/W

Case to sink per module

Clearance

Heatsink compound thermal conductivity = 1 W/mK

External shortest distance in air between 2 terminals

5.5

Shortest distance along external surface of the

insulating material between 2 terminals

Creepage

A mounting compound is recommended and the

torque should be checked after 3 hours to allow for

the spread of the compound. Lubricated threads.

Mounting torque

Weight

10 ꢀ

Document Number: 94470

Revision: 03-Aug-10

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

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