Datasheet > 1SS421(TL3FT)

1SS421(TL3FT)

更新时间： 2024-09-26 05:36:23

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
3页	163K
描述
Rectifier Diode

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中文翻译

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数据手册

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1SS421(TL3FT) 数据手册

1SS421

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS421

High-Speed Switching Application

Unit: mm

Low forward voltage: V

= 0.50V (max)

F (3)

Abusolute Maximum Ratings (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Rating

Unit

300

Maximum (peak) forward current

Average forward current

Surge current (10ms)

200

FSM

P *

Power dissipation

150

°C

Junction temperature

125

Storage temperature range

Operating temperature range

−55 to 125

−40 to 100

°C

stg

opr

°C

Mounted on a glass epoxy circuit board of 20 mm × 20 mm,

Cu pad dimension of 4 mm × 4 mm.

JEDEC

JEITA

―

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

TOSHIBA

1-1G1A

Weight: 1.4 mg (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristics

Symbol

Test Condition

= 1 mA

Min

Typ.

Max

Unit

―

⎯

0.18

0.22

0.44

―

F (1)

F (2)

F (3)

R (1)

R (2)

Forward voltage

―

= 5 mA

―

= 200 mA

0.5

⎯

= 10 V

Reverse current

μA

= 30 V

―

Total capacitance

= 0, f = 1 MHz

Equivalent Circuit (top view)

Marking

Start of commercial production

2006-01

2014-03-01

12 3

中文翻译

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