Datasheet > 1SS427(TPL3)

1SS427(TPL3)

更新时间： 2024-09-27 14:35:51

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	211K
描述
Rectifiers Vr=80V If=0.1A 2Pin

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1SS427(TPL3) 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.71
Base Number Matches：	1

1SS427(TPL3) 数据手册

1SS427

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS427

Ultra-High Speed Switching Applications

Unit: mm

0.6±0.05

z 2-pin compact package: Ideal for high-density mounting

z Low forward voltage: V = 0.98 V (typ.)

F (3)

z Fast reverse recovery time: t = 1.6 ns (typ.)

z Small total capacitance: C = 0.5 pF (typ.)

0.2

±0.05

0.1±0.05

0.07

Absolute Maximum Ratings (Ta = 25°C)

+0.02

0.48

Characteristics

Symbol

Rating

Unit

-0.03

Maximum (peak) reverse voltage

Reverse voltage

fSC

Maximum (peak) forward current

Average forward current

Surge current (10 ms)

Power dissipation

200

100

JEDEC

JEITA

―

1-1L1A

FSM

150 *

150

°C

TOSHIBA

Junction temperature

Weight: 0.6 mg (typ.)

Storage temperature

−55 to 150

stg

* : Mounted on a glass epoxy circuit board of 20 mm × 20 mm,

Cu pad dimension of 4 mm × 4 mm.

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristics

Symbol

Test Condition

= 1 mA

Min

Typ.

Max

Unit

―

0.62

0.75

0.98

―

F (1)

F (2)

F (3)

R (1)

R (2)

Forward voltage

―

= 10 mA

―

= 100 mA

1.20

0.1

0.5

―

= 30 V

Reverse current

μA

―

= 80 V

―

Total capacitance

―

= 0, f = 1 MH

0.5

1.6

Reverse recovery time

―

= 10 mA, Fig.1

―

2008-01-30

12 3 4

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