Datasheet > 1SS77WS

1SS77WS

更新时间： 2022-12-16 16:22:18

品牌	Logo	应用领域
商升特 - SEMTECH		局域网
页数	文件大小	规格书
3页	213K
描述
SILICON EPITAXIAL PLANAR

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1SS77WS 数据手册

1SS77WS

SILICON EPITAXIAL PLANAR

BAND SWITCHING DIODE

For band switching application

PINNING

DESCRIPTION

Cathode

Anode

Top View

Marking Code: "PN"

Simplified outline SOD-323 and symbol

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Reverse Voltage

V_R

I_F

Forward Current

100

Operating Ambient Temperature ¹⁾

T_opr

T_s

- 25 to + 85

- 55 to + 150

Storage Temperature Range

¹⁾Maximum ambient temperature during operation

Characteristics at T_a= 25 C

Parameter

Forward Voltage

Symbol

V_F

Max.

Unit

at I_F= 100 mA

Reverse Current

I_R

C_D

r_f

0.1

1.2

µA

Ω

at V_R= 33 V

Diode Capacitance

at V_R= 6 V, f = 1 MHz

Forward Dynamic Resistance

at I_F= 2 mA, f = 100 MHz

0.85

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 01/09/2006

12 3

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