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1SS385FV,L3F(B PDF预览

1SS385FV,L3F(B

更新时间: 2024-09-29 21:17:27
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管
页数 文件大小 规格书
3页 231K
描述
Rectifier Diode

1SS385FV,L3F(B 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.65二极管类型:RECTIFIER DIODE
Base Number Matches:1

1SS385FV,L3F(B 数据手册

 浏览型号1SS385FV,L3F(B的Datasheet PDF文件第2页浏览型号1SS385FV,L3F(B的Datasheet PDF文件第3页 
1SS385FV  
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type  
1SS385FV  
High-Speed Switching Applications  
Unit: mm  
1.2±0.05  
0.8±0.05  
z Low forward voltage: V = 0.23 V (typ.) @I = 5 mA  
F
F
z Ultra-small package  
1
2
Absolute Maximum Ratings (Ta = 25°C)  
3
Characteristic  
Symbol  
Rating  
Unit  
Maximum (peak) reverse voltage  
Reverse voltage  
V
15  
10  
V
V
RM  
V
R
Maximum (peak) forward current  
Average forward current  
Surge current (10 ms)  
I
200 *  
mA  
mA  
A
FM  
I
100 *  
O
1. ANODE 1  
2. ANODE 2  
3. CATHODE  
I
1 *  
FSM  
P
VESM  
Power dissipation  
150**  
125  
mW  
°C  
°C  
°C  
Junction temperature  
T
j
Storage temperature range  
Operating temperature range  
T
55 to 125  
40 to 100  
stg  
opr  
T
JEDEC  
JEITA  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
TOSHIBA  
1-1Q1A  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*: Unit rating. Total rating = unit rating × 1.5  
** : Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 1 mA  
Min  
Typ.  
Max  
Unit  
V
V
V
I
I
I
0.18  
0.23  
0.35  
0.30  
0.50  
20  
V
V
V
F (1)  
F (2)  
F (3)  
F
F
F
Forward voltage  
= 5 mA  
= 100 mA  
= 10 V  
Reverse current  
I
V
V
μA  
R
R
Total capacitance  
C
T
= 0, f = 1 MHz  
R
20  
pF  
Equivalent Circuit (Top View)  
Marking  
Start of commercial production  
2005-02  
1
2014-03-01  

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