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1SS123

更新时间: 2024-11-08 05:56:51
品牌 Logo 应用领域
科信 - KEXIN 二极管开关光电二极管
页数 文件大小 规格书
1页 40K
描述
SILICON SWITCHING DIODE

1SS123 数据手册

  
SMD Type  
Diodes  
SILICON SWITCHING DIODE  
1SS123  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
3
Features  
Low capacitance: Ct = 4.0 pF MAX  
1
2
High speed switching: trr = 9.0 ns MAX.  
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
1.9  
-0.1  
Wide applications including switching,limitter,clipper.  
Double diode configuration assures economical use.  
Absolute Maximum Ratings Ta = 25  
Parameter  
Peak Reverse Voltage  
Symbol  
Rating  
70  
Unit  
V
VRM  
VR  
IFM  
IO  
DC Reverse Voltage  
Peak Reverse Voltage  
Average Rectified Current  
DC Forward Current  
70  
V
200  
mA  
mA  
mA  
100  
IF  
100  
Junction Temperature  
Storage Temperature Range  
Junction to Ambient*  
Junction to Ambient  
Tj  
150  
Tstg  
-55 to+ 150  
1.0  
R
R
/mW  
/mW  
0.67  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Test Conditions  
IF = 1.0 mA  
Min  
Typ  
600  
750  
855  
900  
Max  
715  
855  
Unit  
mV  
IF = 10 mA  
Continuous reverse voltage  
VF  
IF = 50 mA  
1100  
1300  
1.0  
IF = 100 mA  
VR = 70 V  
Reverse current  
IR  
Ct  
A
Capacitance  
VR = 0, f = 1.0 MHz  
2.5  
4.0  
pF  
Reverse recovery time  
Forward recovery voltage  
trr  
9.0  
ns  
V
IF = 100 mA,VR = 1 V,RL = 100  
IF = 100 mA  
Vf r  
1.75  
Marking  
Marking  
A7  
1
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