Datasheet > 1SS130

1SS130

更新时间： 2023-12-06 20:03:50

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森美特 - SUNMATE		/
页数	文件大小	规格书
2页	467K
描述
Switching Diodes Switch detector

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1SS130 数据手册

1SS130

SILICON EPITAXIAL PLANAR DIODE

DO-35(GLASS)

Features

High switching speed: max. 4 ns

Continuous reverse voltage:max. 75 V

Repetitive peak reverse voltage:max. 100 V

1.0 2(26.0)

MIN.

0.079(2.0)

MAX

Mechanical Data

0.165 (4.2)

MAX

Case: DO-35, glass case

Polarity: Color band denotes cathode

Weight: 0.004 ounces, 0.13 grams

1.0 2(26.0)

MIN.

0.020(0.52)

TYP

Dimensions in millimeters

Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)

Parameter

Symbol

V_RRM

V_RM

I_F

Value

100

Unit

Maximum Repetitive Peak Reverse Voltage

Maximum Continuous Reverse Voltage

Maximum Average Forward Current

Maximum Peak Forward Current

Maximum Power Dissipation

130

°C

I_FM

400

P_D

300

I_FSM

T_J

Maximum Non-repetitive Peak Forward Current

Maximum Junction Temperature

Storage Temperature Range

600

175

T_S

-65 to + 175

°C

Electrical Characteristics (Ta = 25°C unless otherwise noted)

Test Condition

V_R= 20 V

I_F= 10 mA

Min.

Typ.

Max.

0.5

Unit

Parameter

Symbol

I_R

V_F

C_T

Reverse Current

Forward Voltage

1.0

f = 1MHz ; V_R= 0 V

Capacitance between terminals

4.0

I_F= 10 mA , V_R= 6 V

Reverse Recovery Time

Trr

4.0

R_L= 50 W

1 of 2

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