是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | DO-214 |
包装说明: | R-PDSO-C2 | 针数: | 2 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.23 |
Is Samacsys: | N | 其他特性: | EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE, HIGH RELIABILITY, UL RECOGNIZED |
最大击穿电压: | 10.4 V | 最小击穿电压: | 9.44 V |
击穿电压标称值: | 9.92 V | 最大钳位电压: | 14.4 V |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JEDEC-95代码: | DO-214AA |
JESD-30 代码: | R-PDSO-C2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 最大非重复峰值反向功率耗散: | 600 W |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 最低工作温度: | -65 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性: | UNIDIRECTIONAL | 最大功率耗散: | 0.55 W |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 8.5 V |
子类别: | Transient Suppressors | 表面贴装: | YES |
技术: | ZENER | 端子面层: | Tin (Sn) |
端子形式: | C BEND | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
1SMB6.5AT3G | ONSEMI |
功能相似 |
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SMBJ6.5A | LITTELFUSE |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1SMB8.5ATR13 | CENTRAL |
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Trans Voltage Suppressor Diode, 600W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, | |
1SMB8.5ATR13LEADFREE | CENTRAL |
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Trans Voltage Suppressor Diode, 600W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, | |
1SMB8.5CA | CENTRAL |
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BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 600 WATTS, 5.0 THRU | |
1SMB8.5CA | SUNMATE |
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600W plug-in TVS transient suppression diode SMB 8.5V | |
1SMB8.5CABK | CENTRAL |
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暂无描述 | |
1SMB8.5CABKPBFREE | CENTRAL |
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Trans Voltage Suppressor Diode, 8.5V V(RWM), Bidirectional, | |
1SMB8.5CALEADFREE | CENTRAL |
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Trans Voltage Suppressor Diode, 600W, 8.5V V(RWM), Bidirectional, 1 Element, Silicon, SMB, | |
1SMB8.5CAPBFREE | CENTRAL |
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暂无描述 | |
1SMB8.5CATIN/LEAD | CENTRAL |
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Trans Voltage Suppressor Diode, | |
1SMB8.5CATR13 | CENTRAL |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 8.5V V(RWM), Bidirectional, 1 Element, Silicon, |