Datasheet > 1S1830

1S1830

更新时间： 2024-11-14 12:56:59

品牌	Logo	应用领域
森美特 - SUNMATE		二极管
页数	文件大小	规格书
2页	309K
描述
1A plug-in fast recovery diode 1000V DO-15 series

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数据手册

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1S1830 数据手册

1S1830

AXIAL LEADED SILICON RECTIFIER DIODES

VOLTAGE RANGE: 1000V

CURRENT: 1.0 A

Features

Diffused Junction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Mechanical Data

Case: D O - 1 5

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

DO-15

Min

Dim

Max

—

25.40

5.50

Weight: 0.40 grams (approx.)

Mounting Position: Any

7.62

0.889

3.60

0.686

2.60

Marking: Type Number

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

1S1830

Characteristic

SYMBOL

V^RRM

UNIT

Maximum Recurrent Peak Reverse Voltage

Maximum Average Forward Current

1000

I^F(AV)

1.0

0.375"(9.5mm) Lead Length

Ta = 50 °C

Peak Forward Surge Current, 8.3ms Single half sine wave

Superimposed on rated load (JEDEC Method)

Maximum Peak Forward Voltage at I^F= 1.5 Amps.

Repetitive Peak Reverse

FSM

V^F

1.2

I_RRM(1)

I^RRM(2)

400

Tj = 150 C

Current

Storage Temperature Range

Junction Temperature Range

Tstg

T^J

- 40 to + 150

°C

Thermal Resistance (Junction to Ambient) DC

R^th(j-a)

100

°C/W

Notes :

( 1 ) Reverse Recovery Test Conditions : I_F= 0.5 A, I_R= 1.0 A, Irr = 0.25 A.

( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 V_DC

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