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1S1886 PDF预览

1S1886

更新时间: 2024-11-15 06:21:59
品牌 Logo 应用领域
SYNSEMI 整流二极管
页数 文件大小 规格书
2页 30K
描述
SILICON RECTIFIER DIODES

1S1886 数据手册

 浏览型号1S1886的Datasheet PDF文件第2页 
SILICON RECTIFIER DIODES  
1S1885 ~ 1S1888  
PRV : 100 ~ 600 Volts  
Io : 1.0 Ampere  
D2  
FEATURES :  
1.00 (25.4)  
0.161 (4.10)  
MIN.  
* High current capability  
* High surge current capability  
* High reliability  
0.154 (3.90)  
0.284 (7.20)  
0.268 (6.84)  
* Low reverse current  
* Low forward voltage drop  
* Pb / RoHS Free  
1.00 (25.4)  
0.034 (0.86)  
MIN.  
MECHANICAL DATA :  
* Case : D2 Molded plastic  
0.028 (0.71)  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
Dimensions in inches and ( millimeters )  
* Weight : 0.465 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specifie.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
SYMBOL 1S1885 1S1886 1S1887 1S1888  
UNIT  
Maximum Repetitive Peak Reverse Voltage  
Maximum Average Forward Current Ta = 65 °C  
Maximum Peak One Cycle Surge Forward Current  
(Non-repetitive)  
VRRM  
IF  
100  
200  
400  
600  
V
A
1.0  
60 (50Hz)  
66 (60Hz)  
1.2  
IFSM  
A
V
Maximum Forward Voltage at IF = 1.5 A.  
Maximum Repetitive Peak Reverse Current  
(VRRM = Rated)  
VF  
IR  
10  
μA  
IR(H)  
Rth (j-a)  
TJ  
400 (Tj = 150 °C)  
100  
Maximum Thermal Resistance (Junction to Ambient)  
Junction Temperature Range  
°C/W  
°C  
- 40 to + 150  
- 40 to + 150  
Storage Temperature Range  
TSTG  
°C  
Page 1 of 2  
Rev. 02 : March 25, 2005  

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