1S1888

更新时间： 2024-11-15 07:23:27

品牌	Logo	应用领域
EIC		整流二极管
页数	文件大小	规格书
2页	40K
描述
SILICON RECTIFIER DIODES

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中文翻译

获取价格

技术参数
数据手册

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1S1888 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.69	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

1S1888 数据手册

SILICON RECTIFIER DIODES

1S1885 ~ 1S1888

PRV : 100 ~ 600 Volts

Io : 1.0 Ampere

FEATURES :

1.00 (25.4)

0.161 (4.10)

MIN.

* High current capability

* High surge current capability

* High reliability

0.154 (3.90)

0.284 (7.20)

0.268 (6.84)

* Low reverse current

* Low forward voltage drop

* Pb / RoHS Free

1.00 (25.4)

0.034 (0.86)

MIN.

MECHANICAL DATA :

* Case : D2 Molded plastic

0.028 (0.71)

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

* Polarity : Color band denotes cathode end

* Mounting position : Any

Dimensions in inches and ( millimeters )

* Weight : 0.465 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specifie.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

SYMBOL 1S1885 1S1886 1S1887 1S1888

UNIT

Maximum Repetitive Peak Reverse Voltage

Maximum Average Forward Current Ta = 65 °C

Maximum Peak One Cycle Surge Forward Current

(Non-repetitive)

VRRM

100

200

400

600

1.0

60 (50Hz)

66 (60Hz)

1.2

IFSM

Maximum Forward Voltage at IF = 1.5 A.

Maximum Repetitive Peak Reverse Current

(VRRM = Rated)

μA

IR(H)

R_{th (j-a)}

400 (Tj = 150 °C)

100

Maximum Thermal Resistance (Junction to Ambient)

Junction Temperature Range

°C/W

°C

- 40 to + 150

Storage Temperature Range

TSTG

°C

Page 1 of 2

Rev. 02 : March 25, 2005

中文翻译

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