1N914B

更新时间： 2024-11-09 03:54:55

品牌	Logo	应用领域
美微科 - MCC		二极管
页数	文件大小	规格书
3页	88K
描述
500mW 100 Volt Silicon Epitaxial Diodes

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中文翻译

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数据手册

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1N914B 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

1N914(A)(B)

ꢀ

)HDWXUHVꢀ

500mW 100 Volt

Silicon Epitaxial

Diodesꢀ

•

Low Current Leakage

Compression Bond Construction

Low Cost

DO-35

0D[LPXPꢀ5DWLQJVꢀ

Operating Temperature: -55^OC to +150^OC

Storage Temperature: -55^OC to +150^OC

Maximum Thermal Resistance; 300^OC/W Junction To Ambient

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Maximum Repetitive

V_RRM

100V

ReverseVoltage

Average Rectified

Forward Current

I_O

200mA

Power Dissipation

Junction Temperature

Peak Forward Surge

Current

P_D

T_J

500mW

150^OC

1.0A

Cathode

Mark

Pulse Width=1.0

second

Pulse Width=1.0

microsecond

I_FSM

4.0A

Minimum Breakdown

Voltage

100V

75V

I_R=100uA,

I_R=5.0uA

V_R

Maximum

Instantaneous

Forward Voltage

1N914

1N914 A

1N914 B

Maximum Reverse

Current

T = 25^OC

V_F

1.0V

I_FM= 10mA;

I_FM= 20mA;

I_FM= 100mA;

I_FM= 5.0mA;

DIMENSIONS

720mV

25nA

5.0uA

50uA

V =20V, T_J=25^OC,

INCHES

MIN

---

MIN

---

25.40

V =75V, T_J=25^OC,

DIM

MAX

.166

.079

.020

---

MAX

4.2

NOTE

I_R

V =20V, T_J=150^OC

2.00

.52

---

Typical Junction

Capacitance

ReverseRecovery

Time

Measured at 1.0MHz,

C_J

4.0pF

1.000

V =0V

I_F=10mA

V = 6V

T_rr

4.0nS

R_L=100 Ù, I_rr=1.0mA

*Pulse test: Pulse width 300 usec, Duty cycle 2%

www.mccsemi.com

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