Datasheet > 1N914BS

1N914BS

更新时间： 2024-11-25 17:14:59

品牌	Logo	应用领域
德昌 - TC		/
页数	文件大小	规格书
3页	80K
描述
DO-35

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数据手册

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1N914BS 数据手册

TAK CHEONG

^®

SEMICONDUCTOR

400 mW DO-35 Hermetically

Sealed Glass Fast Switching

Diodes

AXIAL LEAD

DO35S

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

P_D

T_STG

T_J

Power Dissipation

400

-65 to +150

+150

°C

DEVICE MARKING DIAGRAM

Storage Temperature Range

Operating Junction Temperature

Working Inverse Voltage

°C

W_IV

I_O

Average Rectified Current

150

I_FM

Non-repetitive Peak Forward Current

450

Peak Forward Surge Current

(Pulse Width = 1.0 µsecond)

I_FSURGE

These ratings are limiting values above which the serviceability of the diode may be impaired.

Specification Features:

§ Fast Switching Device (T_RR<4.0 nS)

§ DO-35 Package (JEDEC)

§ Through-Hole Device Type Mounting

§ Hermetically Sealed Glass

Anode

Cathode

§ Compression Bonded Construction

§ All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable

§ RoHS Compliant

ELECTRICAL SYMBOL

§ Solder Hot Dip Tin (Sn) Terminal Finish

§ Cathode Indicated By Polarity Band

Electrical Characteristics

T_A= 25°C unless otherwise noted

Limits

Unit

Symbol

Parameter

Test Condition

I_R=100µA

Min

100

Max

B_V

Breakdown Voltage

Reverse Leakage Current

Forward Voltage

Volts

I_R=5µA

I_R

V_R=20V

V_R=75V

I_F=5mA

I_F=10mA

I_F=100mA

µA

V_F

1N4448S, 1N914BS

1N4148S

0.62

0.72

1.0

Volts

1N4448S, 1N914BS

T_RR

Reverse Recovery Time

Capacitance

I_F=10mA, V_R=6V

R_L=100W

I_RR=1mA

V_R=0V, f=1M_HZ

Number: DB-206

October 2016 / B

Page 1

12 3

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